IXTV250N075TS IXYS, IXTV250N075TS Datasheet - Page 2

• Manufacturer Part Number: IXTV250N075TS
• Description: MOSFET N-CH 75V 250A PLUS220SMD
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTV250N075TS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 250A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 9900pF @ 25V
• Power - Max: 550W
• Mounting Type: Surface Mount
• Package / Case: PLUS-220SMD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Drain-source Breakdown Voltage: 75 V
• Continuous Drain Current: 250 A
• Power Dissipation: 550 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 250
• Rds(on), Max, Tj=25°c, (?): 0.0040
• Ciss, Typ, (pf): 9900
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): 80
• Trr, Max, (ns): -
• Pd, (w): 550
• Rthjc, Max, (k/w): 0.27
• Package Style: PLUS220 SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
Values
I
I
V
t
IXYS MOSFETs and IGBTs are covered by
Note 1.
one or moreof the following U.S. patents:
S
SM
(T
d(on)
d(off)
f
r
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
iss
oss
rss
thJC
thCS
SD
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
J
= 25° C unless otherwise specified)
2. On through-hole packages, R
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;
location is 5 mm or less from the package body.
Test Conditions
V
V
V
R
V
PLUS220
Test Conditions
V
Pulse width limited by T
I
I
V
(T
F
F
DS
GS
GS
GS
GS
R
G
= 50 A, V
= 50 A, -di/dt = 100 A/µs
J
= 25 V, V
= 10 V; I
= 3.3 Ω (External)
= 10 V, V
PRELIMINARY TECHNICAL INFORMATION
= 0 V, V
= 10 V, V
= 0 V
= 25° C unless otherwise specified)
D
DS
GS
DS
GS
= 60 A, Note 1
DS
= 25 V, f = 1 MHz
= 0 V, Note 1
= 0.5 V
= 0 V
= 0.5 V
4,835,592
4,850,072
4,881,106
DSS
DSS
JM
, I
4,931,844
5,017,508
5,034,796
, I
DS(on)
D
D
= 25 A
= 50 A
Kelvin test contact
5,049,961
5,063,307
5,187,117
Characteristic Values
Min.
Min.
5,237,481
5,381,025
5,486,715
75
9900
1330
Characteristic
Typ.
Typ.
122
285
200
.25
32
50
58
45
50
60
80
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
0.27 °C/W
250
560
1.0
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
ns
S
V
A
A
PLUS220SMD (IXTV_S) Outline
PLUS220 (IXTV) Outline
6,683,344
6,710,405B2
6,710,463
IXTV250N075TS
6,727,585
6,759,692
6771478 B2
IXTV250N075T
Terminals:
1 - Gate
3 - Source
7,005,734 B2
7,063,975 B2
7,071,537
2 - Drain
Tab - Drain