IXTT30N50P IXYS, IXTT30N50P Datasheet - Page 2

• Manufacturer Part Number: IXTT30N50P
• Description: MOSFET N-CH 500V 30A TO-268 D3
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTT30N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 4150pF @ 25V
• Power - Max: 460W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 27 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 460 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.2
• Ciss, Typ, (pf): 4150
• Qg, Typ, (nc): 70
• Trr, Typ, (ns): 400
• Pd, (w): 460
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents:
30
27
24
21
18
15
12
9
6
3
0
0
1
Fig. 1. Output Characteristics
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
g(on)
gs
gd
thJC
thCS
2
V
V
D S
4,850,072
4,881,106
GS
@ 25
3
- Volts
= 10V
Test Conditions
V
V
V
R
V
(TO-247, TO-3P and PLUS220)
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
F
F
DS
GS
GS
GS
GS
8V
G
= I
= 18 A, -di/dt = 100 A/µs
º
= 20 V; I
= 5 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
C
4
4,931,844
5,017,508
5,034,796
S
, V
7V
6V
GS
5
= 0 V,
D
DS
DS
5,049,961
5,063,307
5,187,117
= 0.5 I
DS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
6
D25
, pulse test
5,237,481
5,381,025
5,486,715
DSS
DSS
IXTH 30N50P IXTQ 30N50P IXTT 30N50P
7
, I
, I
D
D
= 0.5 I
= 0.5 I
(T
(T
6,162,665
6,259,123 B1
6,306,728 B1
J
J
= 25° C, unless otherwise specified)
= 25° C, unless otherwise specified)
D25
D25
70
60
50
40
30
20
10
0
Fig. 2. Extended Output Characteristics
0
Min.
Min.
6,404,065 B1
6,534,343
6,583,505
17
IXTV 30N50P IXTV 30N50PS
3
Characteristic Values
Characteristic Values
6
4150
Typ.
Typ.
0.21
445
400
V
27
28
25
27
75
21
70
27
22
GS
9
6,683,344
6,710,405B2
6,710,463
= 10V
12
V
@ 25
8V
Max.
Max.
0.27° C/W
D S
1.5
30
90
15
- Volts
º
° C/W
C
7V
6V
nC
nC
nC
6,727,585
6,759,692
6,771,478 B2
pF
pF
pF
ns
ns
ns
ns
ns
18
S
A
A
V
21
24
27
30