IXTT48P20P IXYS, IXTT48P20P Datasheet - Page 5
![MOSFET P-CH 200V 48A TO-268](/photos/5/55/55547/ixtt48p20p_sml.jpg)
IXTT48P20P
Manufacturer Part Number
IXTT48P20P
Description
MOSFET P-CH 200V 48A TO-268
Manufacturer
IXYS
Series
PolarP™r
Datasheet
1.IXTH48P20P.pdf
(5 pages)
Specifications of IXTT48P20P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
85 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
103nC @ 10V
Input Capacitance (ciss) @ Vds
5400pF @ 25V
Power - Max
462W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.085 Ohms
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
48 A
Power Dissipation
462 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
-200
Id(cont), Tc=25°c, (a)
-48
Rds(on), Max, Tj=25°c, (?)
0.085
Ciss, Typ, (pf)
5400
Qg, Typ, (nc)
103
Trr, Typ, (ns)
260
Pd, (w)
462
Rthjc, Max, (k/w)
0.27
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTT48P20P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
IXTH48P20P
IXTT48P20P
Fig. 13. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_48P20P(B7) 5-13-08