IXTR16P60P IXYS, IXTR16P60P Datasheet - Page 4

• Manufacturer Part Number: IXTR16P60P
• Description: MOSFET P-CH 600V 10A ISOPLUS247
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTR16P60P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 790 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 5120pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Vdss, Max, (v): -600.0
• Id(cont), Tc=25°c, (a): -10.0
• Rds(on), Max, Tj=25°c, (?): 0.790
• Ciss, Typ, (pf): 5120
• Qg, Typ, (nc): 92
• Trr, Typ, (ns): 440
• Pd, (w): 190
• Rthjc, Max, (k/w): 0.66
• Package Style: ISOPLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
-20
-18
-16
-14
-12
-10
100
-50
-45
-40
-35
-30
-25
-20
-15
-10
-8
-6
-4
-2
-5
10
0
0
-3.5
-0.5
0
f
= 1 MHz
-5
-1.0
-4.0
Fig. 9. Forward Voltage Drop of
-10
Fig. 7. Input Admittance
Fig. 11. Capacitance
-1.5
Intrinsic Diode
-15
-4.5
V
T
V
V
GS
J
SD
DS
= 125ºC
-2.0
- Volts
-20
- Volts
- Volts
T
J
= 125ºC
-5.0
- 40ºC
25ºC
-25
-2.5
C iss
C oss
C rss
T
-30
J
-5.5
= 25ºC
-3.0
-35
-6.0
-3.5
-40
-
100.0
-
10.0
-
-10
-
32
28
24
20
16
12
1.0
0.1
-9
-8
-7
-6
-5
-4
-3
-2
-1
8
4
0
0
-
0
0
10
R
DS(on)
Fig. 12. Forward-Bias Safe Operating Area
T
T
Single Pulse
V
I
I
J
C
-2
10
D
G
DS
= 150ºC
= 25ºC
= - 8A
= -1mA
Limit
= - 300V
20
-4
Fig. 8. Transconductance
-6
30
Fig. 10. Gate Charge
Q
DC, 100ms, 10ms
G
-8
40
- NanoCoulombs
I
D
V
- Amperes
DS
-
-10
50
100
- Volts
IXTR16P60P
-12
60
T
J
= - 40ºC
-14
70
1ms
25ºC
-16
80
125ºC
-18
90
100µs
-
1000
100
-20