IXFH24N90P IXYS, IXFH24N90P Datasheet - Page 2

• Manufacturer Part Number: IXFH24N90P
• Description: MOSFET N-CH TO-247
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFH24N90P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 420 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 6.5V @ 1mA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 7200pF @ 25V
• Power - Max: 660W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 420 mOhms
• Forward Transconductance Gfs (max / Min): 16 S
• Drain-source Breakdown Voltage: 900 V
• Continuous Drain Current: 24 A
• Power Dissipation: 660 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 130 nC
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 900
• Id(cont), Tc=25°c, (a): 24
• Rds(on), Max, Tj=25°c, (?): 0.420
• Ciss, Typ, (pf): 7200
• Qg, Typ, (nc): 130
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 660
• Rthjc, Max, (ºc/w): 0.19
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
R
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
T
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
J
SD
Gi
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
I
V
Test Conditions
V
Gate input resistance
V
V
R
V
(TO-247)
V
Repetitive, pulse width limited by T
I
F
Resistive Switching Times
F
R
DS
GS
GS
GS
GS
G
= 12A, -di/dt = 100A/μs
= I
= 100V, V
PRELIMINARY TECHNICAL INFORMATION
= 0V
= 20V, I
= 10V, V
= 2Ω (External)
= 10V, V
S
= 0V, V
, V
GS
= 0V, Note 1
D
DS
GS
DS
DS
= 0.5 • I
= 25V, f = 1MHz
= 0V
4,835,592
4,881,106
= 0.5 • V
= 0.5 • V
D25
, Note 1
4,931,844
5,017,508
5,034,796
DSS
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
10
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
7200
Typ.
0.25
490
130
1.1
1.1
11
16
60
46
68
50
58
38
40
0.19 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
300 ns
1.5
24
96
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 Outline
TO-247 (IXFH) Outline
6,727,585
Dim.
6,771,478 B2 7,071,537
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15
Min.
Millimeter
4.7
2.2
2.2
1.0
.4
7,005,734 B2
7,063,975 B2
21.46
16.26
20.32
BSC
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
IXFT24N90P
IXFH24N90P
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242
Inches
7,157,338B2
Max.
BSC
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216