IXFH32N50Q IXYS, IXFH32N50Q Datasheet - Page 2

MOSFET N-CH 500V 30A TO-247AD

IXFH32N50Q

Manufacturer Part Number
IXFH32N50Q
Description
MOSFET N-CH 500V 30A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH32N50Q

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
4925pF @ 25V
Power - Max
416W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
32 A
Power Dissipation
416 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
32
Rds(on), Max, Tj=25°c, (?)
0.16
Ciss, Typ, (pf)
3950
Qg, Typ, (nc)
153
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
357
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH32N50Q
Manufacturer:
RENESAS
Quantity:
50 000
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
SM
RM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
thJC
thCK
SD
rss
g(on)
gs
gd
RM
Test Conditions
V
Test Conditions
V
Repetitive; pulse width limited by T
I
F
GS
DS
= I
I
F
S
= 0 V
= 10 V; I
V
V
R
V
(TO-247)
, V
= I
GS
GS
GS
G
S
= 2 Ω (External),
GS
, -di/dt = 100 A/µs, V
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V, Note 1
D
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
, Note 1
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
(T
(T
R
DSS
DSS
= 100 V
J
J
= 25°C, unless otherwise specified)
, I
, I
= 25°C, unless otherwise specified)
D
D
JM
= 0.5 • I
= 0.5 • I
D25
D25
min.
min.
18
Characteristic Values
Characteristic Values
3950 4925
0.75
0.25
typ.
typ.
640 800
210 260
153 190
7.5
28
35
42
75
20
26
85 105
0.30
max.
max.
45
50
95
25
32
128
250
1.5
32
K/W
K/W
nC
nC
nC
µC
pF
pF
pF
n s
n s
n s
n s
n s
S
A
A
V
A
TO-247 AD (IXFH) Outline
Terminals: 1 - Gate
TO-268 Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
1
3 - Source
20.80
15.75
19.81
Min.
2
1.65
2.87
5.20
3.55
5.89
4.32
6.15
Millimeter
4.7
2.2
2.2
1.0
.4
3
IXFH 32N50Q
IXFT 32N50Q
BSC
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
6,534,343
.8
2 - Drain
Tab - Drain
0.205
0.232
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
242
Inches
6,583,505
BSC
0.225
0.252
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216

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