IXFK44N80P IXYS, IXFK44N80P Datasheet - Page 4

MOSFET N-CH 800V 44A TO-264

IXFK44N80P

Manufacturer Part Number
IXFK44N80P
Description
MOSFET N-CH 800V 44A TO-264
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFK44N80P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
198nC @ 10V
Input Capacitance (ciss) @ Vds
12000pF @ 25V
Power - Max
1040W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
44 A
Power Dissipation
1200 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
44
Rds(on), Max, Tj=25°c, (?)
0.19
Ciss, Typ, (pf)
12000
Qg, Typ, (nc)
198
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
1200
Rthjc, Max, (ºc/w)
0.12
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFK44N80P
Manufacturer:
PANASONIC
Quantity:
10 000
Part Number:
IXFK44N80P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
IXYS reserves the right to change limits, test conditions, and dimensions.
100000
10000
70
60
50
40
30
20
10
140
120
100
1000
0
80
60
40
20
100
0
10
3.5
0.3
0
0.4 0.5
f = 1MHz
4
5
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Source Current vs.
T
Source-To-Drain Voltage
J
= 125
10
T
0.6 0.7
J
4.5
= 125
V
- 40
V
°
25
15
G S
C
S D
V
°
°
°
DS
C
C
C
- Volts
- Volts
0.8
5
- Volts
20
C iss
C oss
C rss
0.9
T
25
J
5.5
= 25
1
°
30
C
1.1 1.2
6
35
6.5
1.3
40
1.00
0.10
0.01
0.00
0.0001
90
80
70
60
50
40
30
20
10
10
0
9
8
7
6
5
4
3
2
1
0
Fig. 13. Maxim um Transient Therm al
0
0
T
J
V
I
I
= - 40
D
G
125
DS
0.001
10
25
= 22A
= 10mA
25
Fig. 8. Transconductance
°
= 400V
°
C
°
C
Pulse Width - Seconds
C
Fig. 10. Gate Charge
20
50
Q
Resistance
0.01
G
30
I
75
- NanoCoulombs
D
- Amperes
100
40
0.1
125
IXFK 44N80P
IXFX 44N80P
50
150
60
1
175
70
10
200
80

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