IXTQ40N50L2 IXYS, IXTQ40N50L2 Datasheet - Page 2

• Manufacturer Part Number: IXTQ40N50L2
• Description: MOSFET N-CH 40A 500V TO-3P
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTQ40N50L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 320nC @ 10V
• Input Capacitance (ciss) @ Vds: 10400pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 40
• Rds(on), Max, Tj=25°c, (?): 0.17
• Ciss, Typ, (pf): 10400
• Qg, Typ, (nc): 320
• Trr, Typ, (ns): 500
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Safe Operating Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
I
I
V
t
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
d(on)
r
d(off)
f
rr
TO-268 (IXTT) Outline
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
= 25°C, unless otherwise specified)
V
V
Resistive Switching Times
V
R
V
(TO-247&TO-3P)
Test Conditions
V
Test Conditions
V
Repetitive, pulse width limited by T
I
I
Test Conditions
F
F
DS
GS
GS
GS
DS
GS
G
= I
= I
PRELIMINARY TECHNICAL INFORMATION
= 10V, V
= 2Ω (External)
= 400V, I
= 0V
S
S
= 10V, I
= 0V, V
= 10V, V
, V
, -di/dt = 100A/μs, V
GS
= 0V, Note 1
DS
D
DS
D
DS
= 0.5 • I
= 25V, f = 1MHz
= 0.8A, T
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
D25
C
DSS
, Note 1
DSS
4,931,844
5,017,508
5,034,796
= 75°C, tp = 3s
R
, I
= 100V
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
(T
JM
J
= 25°C, unless otherwise specified)
D25
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
Min.
Min.
Min.
11
320
6,162,665
6,259,123 B1
6,306,728 B1
10.4
0.25
Typ.
Typ.
Typ.
655
155
133
127
320
198
500
15
50
44
64
0.23 °C/W
160
1.5
19
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
Max.
40
°C/W
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
W
IXTH40N50L2 IXTQ40N50L2
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 (IXTH) Outline
TO-3P (IXTQ) Outline
Terminals: 1 - Gate
Dim.
6,727,585
6,771,478 B2 7,071,537
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
1
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
2
Min.
4.7
2.2
2.2
1.0
Millimeter
.4
3 - Source
3
7,005,734 B2
7,063,975 B2
21.46
16.26
20.32
e
IXTT40N50L2
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
∅ P
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216