IXFK94N50P2 IXYS, IXFK94N50P2 Datasheet - Page 4
![MOSFET N-CH 500V 94A TO264](/photos/5/23/52392/to-264_sml.jpg)
IXFK94N50P2
Manufacturer Part Number
IXFK94N50P2
Description
MOSFET N-CH 500V 94A TO264
Manufacturer
IXYS
Series
PolarP2™ HiPerFET™r
Type
PolarP2 HiPerFETr
Datasheet
1.IXFX94N50P2.pdf
(5 pages)
Specifications of IXFK94N50P2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
55 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
94A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
220nC @ 10V
Input Capacitance (ciss) @ Vds
13700pF @ 25V
Power - Max
1300W
Mounting Type
Through Hole
Package / Case
TO-264
Product
MOSFET Gate Drivers
Rise Time
34 ns
Fall Time
11 ns
Supply Current
94 A
Maximum Power Dissipation
1300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Maximum Turn-off Delay Time
67 ns
Maximum Turn-on Delay Time
16 ns
Minimum Operating Temperature
- 55 C
Number Of Drivers
Single
Number Of Outputs
1
Output Current
94 A
Output Voltage
500 V
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
94
Rds(on), Max, Tj=25°c, (?)
0.055
Ciss, Typ, (pf)
14200
Qg, Typ, (nc)
228
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
1300
Rthjc, Max, (ºc/w)
0.096
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFK94N50P2
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
300
250
200
150
100
120
100
100
50
80
60
40
20
10
0
0
0.3
3.0
0
f
0.4
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
5
0.5
0.6
4.0
10
T
Fig. 7. Input Admittance
J
0.7
Fig. 11. Capacitance
= 125ºC
4.5
15
0.8
V
V
V
SD
DS
GS
0.9
5.0
- Volts
- Volts
20
- Volts
T
J
= 125ºC
1.0
T
- 40ºC
J
25ºC
5.5
25
= 25ºC
1.1
C rss
C iss
C oss
1.2
6.0
30
1.3
6.5
35
1.4
1.5
7.0
40
1000
100
140
120
100
0.1
10
80
60
40
20
10
1
0
9
8
7
6
5
4
3
2
1
0
10
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
10
DS
= 150ºC
R
= 25ºC
= 47A
= 10mA
DS(on)
= 250V
Fig. 12. Forward-Bias Safe Operating Area
20
Limit
50
30
Fig. 8. Transconductance
40
Fig. 10. Gate Charge
Q
100
G
50
- NanoCoulombs
I
D
V
- Amperes
DS
100
60
- Volts
70
150
IXFK94N50P2
IXFX94N50P2
80
T
J
= - 40ºC
90
25ºC
125ºC
200
100
100µs
1ms
10ms
100ms
110
1,000
250
120