IXTT40N50L2 IXYS, IXTT40N50L2 Datasheet - Page 3

• Manufacturer Part Number: IXTT40N50L2
• Description: MOSFET N-CH 40A 500V TO-268
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTT40N50L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 320nC @ 10V
• Input Capacitance (ciss) @ Vds: 10400pF @ 25V
• Power - Max: 540W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 40
• Rds(on), Max, Tj=25°c, (?): 0.17
• Ciss, Typ, (pf): 10400
• Qg, Typ, (nc): 320
• Trr, Typ, (ns): 500
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0
0
0
V
Fig. 5. R
GS
10
= 10V
2
1
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
20
DS(on)
4
2
30
vs. Drain Current
Normalized to I
6
3
V
I
DS
D
V
@ 125ºC
V
@ 25ºC
40
V
DS
GS
- Amperes
GS
- Volts
= 20V
- Volts
8
4
= 20V
12V
10V
9V
12V
10V
50
10
5
60
D
T
J
= 20A Value
= 125ºC
12
6
70
6V
8V
7V
9V
8V
7V
5V
6V
5V
T
J
14
80
7
= 25ºC
16
90
8
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
90
80
70
60
50
40
30
20
10
45
40
35
30
25
20
15
10
0
5
0
-50
-50
0
Fig. 4. R
V
GS
Fig. 2. Extended Output Characteristics
-25
-25
= 10V
Fig. 6. Maximum Drain Current vs.
5
IXTH40N50L2 IXTQ40N50L2
DS(on)
vs. Junction Temperature
0
0
V
GS
T
Case Temperature
= 20V
10
T
C
J
12V
10V
Normalized to I
9V
- Degrees Centigrade
25
25
- Degrees Centigrade
V
DS
8V
7V
6V
5V
@ 25ºC
- Volts
50
15
50
I
D
= 40A
75
75
IXTT40N50L2
20
D
= 20A Value
100
100
IXYS REF: T_40N50L2(8R)01-20-09-A
25
I
125
D
125
= 20A
150
150
30