IXTX32P60P IXYS, IXTX32P60P Datasheet - Page 2

• Manufacturer Part Number: IXTX32P60P
• Description: MOSFET P-CH 600V 32A PLUS247
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTX32P60P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 196nC @ 10V
• Input Capacitance (ciss) @ Vds: 11100pF @ 25V
• Power - Max: 890W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vdss, Max, (v): -600
• Id(cont), Tc=25°c, (a): -32
• Rds(on), Max, Tj=25°c, (?): 0.35
• Ciss, Typ, (pf): 11100
• Qg, Typ, (nc): 196
• Trr, Typ, (ns): 480
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
IXYS reserves the right to change limits, test conditions, and dimensions.
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
V
V
Resistive Switching Times
V
R
V
V
Repetitive, pulse width limited by T
I
I
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= -16A, V
= -16A, -di/dt = -150A/μs
= -100V, V
PRELIMINARY TECHNICAL INFORMATION
= -10V, I
= 0V, V
= -10V, V
= 1Ω (External)
= -10V, V
= 0V
DS
GS
D
DS
DS
GS
= - 25V, f = 1MHz
= 0.5 • I
= 0V, Note 1
4,835,592
4,881,106
= 0.5 • V
= 0.5 • V
= 0V
D25
, Note 1
4,931,844
5,017,508
5,034,796
DSS
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
21
Min.
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
- 47.6
0.15
Typ.
11.1
925
196
Typ.
11.4
480
77
37
27
95
33
54
58
32
0.14 °C/W
Max.
- 2.8
-128
6,404,065 B1
6,534,343
6,583,505
- 32
Max.
°C/W
μC
nC
nC
nC
nF
pF
pF
nS
ns
ns
ns
ns
A
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 (IXTK) Outline
PLUS 247
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
20.80
15.75
19.81
TM
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
Millimeter
5.45 BSC
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
(IXTX) Outline
7,005,734 B2
7,063,975 B2
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
IXTK32P60P
IXTX32P60P
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
Inches
7,157,338B2
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190