IXFK110N07 IXYS, IXFK110N07 Datasheet - Page 4

• Manufacturer Part Number: IXFK110N07
• Description: MOSFET N-CH 70V 110A TO-264AA
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK110N07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 70V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 480nC @ 10V
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Vdss, Max, (v): 70
• Id(cont), Tc=25°c, (a): 110
• Rds(on), Max, Tj=25°c, (?): 0.006
• Ciss, Typ, (pf): 9000
• Qg, Typ, (nc): 480
• Trr, Typ, (ns): -
• Trr, Max, (ns): 150
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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12000
10000
8000
6000
4000
2000
16
14
12
10
0
8
6
4
2
0
0
10
10
10
0
0
-1
-2
10
100
Figure 7. Gate Charge
-3
V
Figure 9. Capacitance Curves
DS
I
I
D
G
Gate Charge - nCoulombs
= 40V
= 38A
= 1mA
10
200
V
300
DS
- Volts
20
400
Ciss
Coss
Crss
500
30
F = 1MHz
600
10
700
Figure 11. Transient Thermal Resistance
40
-2
IXFK 110N06 IXFK 105N07 IXFK 110N07
Time - Seconds
Figure 10. Source-Drain Voltage vs. Source Current
125
100
400
300
200
100
75
50
25
0
-50
Figure 8. Drain Current vs. Case Temperature
0
0.0
T
J
-25
=150
O
C
Case Temperature -
T
10
0.5
IXFK110
0
J
=150
-1
IXFK105
25
O
C
V
SD
50
- Volts
1.0
T
J
=100
75
T
J
=25
O
C
100 125 150
O
O
C
1.5
C
2.0
10
4 - 4
0