IXTR170P10P IXYS, IXTR170P10P Datasheet - Page 3

• Manufacturer Part Number: IXTR170P10P
• Description: MOSFET P-CH 100V 108A ISOPLUS247
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTR170P10P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 85A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 108A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 12600pF @ 25V
• Power - Max: 312W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -108
• Rds(on), Max, Tj=25°c, (?): 0.013
• Ciss, Typ, (pf): 12600
• Qg, Typ, (nc): 240
• Trr, Typ, (ns): 176
• Pd, (w): 312
• Rthjc, Max, (k/w): 0.4
• Package Style: ISOPLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
-180
-160
-140
-120
-100
-180
-160
-140
-120
-100
-80
-60
-40
-20
-80
-60
-40
-20
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
0
0.0
0.0
0
Fig. 5. R
V
GS
-0.5
-40
= -10V
-0.4
-15V
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
- - - -
-1.0
-80
-0.8
V
GS
Drain Current
Normalized to I
I
-120
-1.5
D
= -15V
V
V
@ 125ºC
@ 25ºC
DS
-10V
- 9V
- Amperes
DS
V
-1.2
GS
- Volts
- Volts
= -15V
-160
-2.0
-10V
- 9V
-1.6
T
-200
-2.5
D
J
= 125ºC
= - 85A vs.
-2.0
- 8V
- 7V
- 6V
- 5V
-3.0
-240
T
- 8V
- 7V
- 6V
- 5V
J
= 25ºC
-2.4
-3.5
-280
-300
-270
-240
-210
-180
-150
-120
-120
-110
-100
-90
-60
-30
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0
-50
-50
0
V
GS
Fig. 4. R
V
Fig. 2. Extended Output Characteristics
-1
= -15V
GS
-25
-25
-10V
= -10V
Fig. 6. Maximum Drain Current vs.
-2
DS(on)
0
0
-3
Junction Temperature
T
J
T
- Degrees Centigrade
Case Temperature
J
- Degrees Centigrade
-4
Normalized to I
25
25
- 9V
@ 25ºC
V
DS
-5
- 8V
- 7V
- 6V
- 5V
50
50
- Volts
I
IXTR170P10P
D
= -170A
-6
75
75
-7
D
-8
= - 85A vs.
I
100
100
D
= - 85A
-9
125
125
-10
150
150
-11