IXFR180N10 IXYS, IXFR180N10 Datasheet
IXFR180N10
Manufacturer Part Number
IXFR180N10
Description
MOSFET N-CH 100V 165A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFR180N10.pdf
(2 pages)
Specifications of IXFR180N10
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
165A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
400nC @ 10V
Input Capacitance (ciss) @ Vds
9400pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohms
Forward Transconductance Gfs (max / Min)
90 s
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
165 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
165
Rds(on), Max, Tj=25°c, (?)
0.008
Ciss, Typ, (pf)
9400
Qg, Typ, (nc)
400
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
417
Rthjc, Max, (ºc/w)
0.30
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFR180N10
Manufacturer:
IXYS
Quantity:
200
© 2000 IXYS All rights reserved
HiPerFET
ISOPLUS247
(Electrically Isolated Back Surface)
Single MOSFET Die
Preliminary data
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
V
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
D25
D(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSM
AR
AS
D
GS
ISOL
DSS
GS(th)
DS(on)
Note 1
V
V
Test Conditions
T
T
Continuous
Transient
T
External lead (current limit)
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
Test Conditions
V
V
V
V
S
C
C
C
C
C
C
GS
J
J
J
GS
DS
GS
GS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C (MOSFET chip capability)
= 25°C, Note 1
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V, I
= V
= 10 V, I
= ±20 V, V
= V
= 0 V
DM
TM
GS
, di/dt £ 100 A/ms, V
DSS
, I
Power MOSFETs
D
D
= 3mA
= 8mA
D
TM
= 90A
G
DS
= 2 W
= 0
t = 1 min
GS
= 1 MW
DD
£ V
T
T
(T
J
J
DSS
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
min.
100
2.0
Characteristic Values
-55 ... +150
-55 ... +150
IXFR 180N10
Maximum Ratings
typ.
2500
100
100
±20
±30
165
720
180
400
150
300
76
60
3
5
5
max.
±100 nA
100 mA
4.0 V
8 mW
2 mA
V/ns
mJ
V~
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
J
g
ISOPLUS 247
G = Gate
S = Source
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
• Low drain to tab capacitance(<25pF)
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
rated
power supplies
G
V
I
R
t
DS (on)
D25
rr
D
DSS
DS(on)
£ 250 ns
HDMOS
TM
D = Drain
Isolated back surface*
= 100
= 165
=
TM
process
98584A (7/00)
8 mW
V
A
1 - 2
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IXFR180N10 Summary of contents
Page 1
... GSS DSS DS DSS 90A DS(on Note 1 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFR 180N10 Maximum Ratings 100 = 1 MW 100 GS ±20 ±30 165 76 720 180 60 3 £ DSS 400 -55 ... +150 150 -55 ... +150 ...
Page 2
... D 220 0.30 0.15 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 100 V 1 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFR 180N10 ISOPLUS 247 (IXFR) OUTLINE Gate, 2 Drain (Collector) ...