IXFK90N20 IXYS, IXFK90N20 Datasheet - Page 3

• Manufacturer Part Number: IXFK90N20
• Description: MOSFET N-CH 200V 90A TO-264AA
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK90N20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 380nC @ 10V
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 90
• Rds(on), Max, Tj=25°c, (?): 0.02
• Ciss, Typ, (pf): 9000
• Qg, Typ, (nc): 380
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
200
180
160
140
120
100
120
100
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
80
60
40
20
80
60
40
20
0
0
-50
0
0
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
T
J
= 25°C
T
J
1
-25
= 25°C
50
106N20
90N20
Case Temperature
2
DS(on)
0
100
3
V
T
GS
25
vs. Drain Current
I
C
D
V
= 10V
4
150
- Degrees C
- Amperes
DS
- Volts
50
5
V
GS
200
= 10V
6
75
V
GS
250
7
= 15V
100 125 150
9V
8V
7V
8
300
9
5V
6V
350
10
IXFK100N20
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
200
180
160
140
120
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
80
60
40
20
0
-50
-50
Fig. 2 Input Admittance
Fig. 4 Temperature Dependence
Fig. 6 Temperature Dependence of
0
1
-25
-25
V
of Drain to Source Resistance
Breakdown and Threshold Voltage
IXFN90N20
GS(th)
2
0
0
3
T
T
25
25
J
J
V
4
- Degrees C
- Degrees C
T
GS
I
D
J
= 25°C
= 53A
- Volts
50
50
5
6
75
75
IXFN106N20
7
100 125 150
100 125 150
BV
8
DSS
9
10
3 - 4