IXFK27N80 IXYS, IXFK27N80 Datasheet - Page 4

• Manufacturer Part Number: IXFK27N80
• Description: MOSFET N-CH 800V 27A TO-264AA
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK27N80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 400nC @ 10V
• Input Capacitance (ciss) @ Vds: 9740pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 27
• Rds(on), Max, Tj=25°c, (?): 0.32
• Ciss, Typ, (pf): 8400
• Qg, Typ, (nc): 350
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
0.001
100
0.01
80
60
40
20
0.1
12
10
0.0001
Figure 7. Gate Charge
0
Figure 9. Forward Voltage Drop of the Intrinsic Diode
Figure 10. Transient Thermal Resistance
8
6
4
2
0
1
0.2
0
D=0.02
D=0.5
D=0.2
D=0.1
D=0.05
D=0.01
0.4
Single pulse
V
Vds=300V
100
DS
I
I
I
I
D
D
G
G
=30A
=10mA
= 400V
= 27A
= 1mA
Gate Charge - nC
0.6
V
200
SD
T
J
- Volts
0.001
0.8
= 125
300
O
C
1.0
T
J
= 25
400
O
1.2
C
D = Duty Cycle
1.4
500
0.01
Pulse Width - Seconds
4,835,592
4,850,072
4,881,106
4,931,844
10000
1000
Figure 8. Capacitance Curves
100
0.1
0
5,017,508
5,034,796
IXFK 25N80
IXFN 25N80
5
10
5,049,961
5,063,307
Ciss
Coss
15
Crss
V
DS
1
- Volts
20
5,187,117
5,237,481
25
IXFK 27N80
IXFN 27N80
f = 1MHz
30
5,486,715
5,381,025
35
6,306,728B1
10
40