IXFB80N50Q2 IXYS, IXFB80N50Q2 Datasheet

MOSFET N-CH 500V 80A PLUS264

IXFB80N50Q2

Manufacturer Part Number
IXFB80N50Q2
Description
MOSFET N-CH 500V 80A PLUS264
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFB80N50Q2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
5.5V @ 8mA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
15000pF @ 25V
Power - Max
960W
Mounting Type
Through Hole
Package / Case
3-PLUS264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
80 A
Power Dissipation
960 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
80
Rds(on), Max, Tj=25°c, (?)
0.06
Ciss, Typ, (pf)
15000
Qg, Typ, (nc)
250
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
960
Rthjc, Max, (ºc/w)
0.13
Package Style
PLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFB80N50Q2
Manufacturer:
FSC
Quantity:
9 000
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
Symbol
V
V
V
V
I
I
I
I
E
E
dV/dt
P
T
T
T
T
T
F
Weight
Symbol
BV
V
I
R
© 2007 IXYS CORPORATION, All rights reserved
D25
DRMS
DM
AR
GSS
I
J
JM
stg
L
SOLD
C
DSS
DSS
DGR
GSS
GSM
AR
AS
D
GS(th)
DS(on)
DSS
Test Conditions
T
T
Continuous
Transient
T
External lead limited
T
T
T
T
I
T
1.6 mm (0.063 in.) from case for 10s
Plastic body for 10s
Mounting force
Test Conditions
S
V
V
V
V
V
V
J
J
C
C
C
C
C
C
GS
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
= 25°C
= V
= ±30 V, V
= 0V
= 10V, I
= V
= 0 V, I
DM
, V
DSS
TM
GS
rr
, I
DD
D
D
D
≤ V
= 1mA
= 8mA
= 0.5 • I
DS
DSS
= 0V
g
, T
, Low Intrinsic R
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
T
(T
J
J
= 125°C
= 25°C, unless otherwise specified)
JM
IXFB80N50Q2
G
30...120/6.7...27
Characteristic Values
-55 ... +150
-55 ... +150
500
Min.
3.0
Maximum Ratings
± 30
± 40
500
500
320
960
150
300
260
5.0
80
75
80
60
20
10
Typ.
± 200
Max.
100
5.5
5
60 mΩ
N / lbs
V/ns
mA
mJ
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
J
V
I
R
t
PLUS264
G = Gate
S = Source
Features
resistance
Applications
Advantages
D25
rr
Double metal process for low gate
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Pulse generation
Laser drivers
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
PLUS 264
mounting
Space savings
High power density
DSS
DS(on)
G
D
S
TM
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
=
=
( IXFB)
TM
package for clip or spring
D = Drain
TAB = Drain
500V
250ns
( TAB )
60mΩ Ω Ω Ω Ω
80A
DS98958F(07/07)

Related parts for IXFB80N50Q2

IXFB80N50Q2 Summary of contents

Page 1

... ± GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2007 IXYS CORPORATION, All rights reserved IXFB80N50Q2 G Maximum Ratings 500 = 1MΩ 500 GS ± 30 ± 320 5.0 ≤ 150°C 20 960 -55 ... +150 150 -55 ... +150 300 260 30...120/6.7...27 10 Characteristic Values (T = 25°C, unless otherwise specified) J Min ...

Page 2

... I 80 DSS D D25 120 0.13 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. JM 1.4 12 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFB80N50Q2 TM PLUS264 (IXFB) Outline Max °C/W 0.13 °C/W Max 320 A 1.5 V 250 ns μC ...

Page 3

... I - Amperes D © 2007 IXYS CORPORATION, All rights reserved 125º 25ºC J 120 160 200 IXFB80N50Q2 Fig. 2. Extended Output Characteristics @ 25 deg. C 200 V = 10V GS 180 9V 8V 160 140 120 100 Volts D S Fig Norm alized to I DS(on) Value vs. Junction Tem perature 3 2 ...

Page 4

... S D Fig. 11. Capacitance 100000 f = 1MHz 10000 1000 100 IXYS reserves the right to change limits, test conditions, and dimensions. 25ºC 6.5 7.5 1 1.2 1.4 1.6 C iss C oss C rss Volts IXFB80N50Q2 Fig. 8. Transconductance 120 100 100 I - Amperes D Fig. 10. Gate Charge 250V 40A 10mA ...

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