IXTX60N50L2 IXYS, IXTX60N50L2 Datasheet - Page 4

• Manufacturer Part Number: IXTX60N50L2
• Description: MOSFET N-CH 60A 500V PLUS247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTX60N50L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 610nC @ 10V
• Input Capacitance (ciss) @ Vds: 24000pF @ 25V
• Power - Max: 960W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.10
• Ciss, Typ, (pf): 24000
• Qg, Typ, (nc): 610
• Trr, Typ, (ns): 980
• Pd, (w): 960
• Rthjc, Max, (k/w): 0.13
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
200
180
160
140
120
100
100
100
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
0.4
3.5
0
f
4.0
= 1 MHz
0.5
5
4.5
Fig. 9. Forward Voltage Drop of
0.6
5.0
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
5.5
J
= 125ºC
Intrinsic Diode
0.7
15
V
V
V
6.0
SD
DS
GS
- Volts
- Volts
- Volts
0.8
T
6.5
20
J
C iss
C oss
= 125ºC
C rss
- 40ºC
7.0
25ºC
0.9
25
7.5
T
J
= 25ºC
1.0
8.0
30
8.5
1.1
35
9.0
1.2
9.5
40
1.000
0.100
0.010
0.001
16
14
12
10
55
50
45
40
35
30
25
20
15
10
0.00001
8
6
4
2
0
5
0
0
0
V
I
I
10
D
G
100
DS
= 30A
= 10mA
Fig. 12. Maximum Transient Thermal
0.0001
= 250V
20
T
J
200
= - 40ºC
Fig. 8. Transconductance
125ºC
30
25ºC
Fig. 10. Gate Charge
0.001
Q
300
Pulse Width - Seconds
G
40
- NanoCoulombs
I
D
Impedance
- Amperes
400
50
0.01
500
60
70
IXTK60N50L2
IXTX60N50L2
600
0.1
80
700
90
1
800
100
110
900
10