IXTK60N50L2 IXYS, IXTK60N50L2 Datasheet - Page 3

• Manufacturer Part Number: IXTK60N50L2
• Description: MOSFET N-CH 60A 500V TO-264
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTK60N50L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 610nC @ 10V
• Input Capacitance (ciss) @ Vds: 24000pF @ 25V
• Power - Max: 960W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.10
• Ciss, Typ, (pf): 24000
• Qg, Typ, (nc): 610
• Trr, Typ, (ns): 980
• Pd, (w): 960
• Rthjc, Max, (k/w): 0.13
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
60
55
50
45
40
35
30
25
20
15
10
60
55
50
45
40
35
30
25
20
15
10
5
0
5
0
0.0
0
0
Fig. 5. R
V
0.5
GS
1
20
= 10V
20V
1.0
Fig. 1. Output Characteristics
2
Fig. 3. Output Characteristics
DS(on)
40
- - - -
1.5
3
vs. Drain Current
Normalized to I
60
V
2.0
4
I
DS
D
V
@ 125ºC
@ 25ºC
DS
- Amperes
V
- Volts
GS
V
2.5
- Volts
80
GS
5
= 20V
14V
12V
10V
= 20V
12V
10V
9V
3.0
6
100
D
3.5
7
= 30A Value
120
T
J
4.0
= 125ºC
8
T
8V
7V
9V
8V
7V
6V
5V
6V
5V
J
140
= 25ºC
4.5
9
160
5.0
10
160
140
120
100
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
65
60
55
50
45
40
35
30
25
20
15
10
80
60
40
20
5
0
0
-50
-50
0
Fig. 4. R
V
Fig. 2. Extended Output Characteristics
GS
-25
-25
= 10V
Fig. 6. Maximum Drain Current vs.
5
V
DS(on)
vs. Junction Temperature
GS
0
0
= 20V
Case Temperature
T
14V
12V
10
T
C
Normalized to I
J
- Degrees Centigrade
25
25
- Degrees Centigrade
V
DS
@ 25ºC
- Volts
15
50
50
10V
7V
9V
8V
6V
I
D
75
75
= 60A
IXTK60N50L2
IXTX60N50L2
20
D
= 30A Value
100
100
IXYS REF: T_60N50L2(9R)12-08-08-B
25
I
D
125
125
= 30A
150
150
30