NTGS3455T1G ON Semiconductor, NTGS3455T1G Datasheet
NTGS3455T1G
Manufacturer Part Number
NTGS3455T1G
Description
MOSFET P-CH 30V 2.5A 6-TSOP
Manufacturer
ON Semiconductor
Datasheet
1.NTGS3455T1G.pdf
(5 pages)
Specifications of NTGS3455T1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
480pF @ 5V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SC-74-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Forward Transconductance Gfs (max / Min)
6 S
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.5 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTGS3455T1GOS
NTGS3455T1GOS
NTGS3455T1GOSTR
NTGS3455T1GOS
NTGS3455T1GOSTR
Available stocks
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Price
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Quantity:
85 000
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ON Semiconductor
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Manufacturer:
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Quantity:
20 000
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION
Generic Copy
08-Oct-2008
SUBJECT: ON Semiconductor Final Product/Process Change Notification #16163
TITLE: Copper Wire in the TSOP6 Package for MOSFET Products
PROPOSED FIRST SHIP DATE: 08-Jan-2009
AFFECTED CHANGE CATEGORY(S): Assembly
AFFECTED PRODUCT DIVISION(S): PowerFET Business Unit
FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION:
Contact your local ON Semiconductor Sales Office or Tom Huettl <Tom.Huettl@onsemi.com >
SAMPLES:
Contact your local ON Semiconductor Sales Office or Sam Abdeh <sam.abdeh@onsemi.com >
ADDITIONAL RELIABILITY DATA:
Contact your local ON Semiconductor Sales Office or Donna Scheuch <d.scheuch@onsemi.com >
NOTIFICATION TYPE:
Final Product/Process Change Notification (FPCN)
Final change notification sent to customers. FPCNs are issued at least 90 days prior to implementation
of the change.
ON Semiconductor will consider this change approved unless specific conditions of acceptance are
provided in writing within 30 days of receipt of this notice. To do so, contact your local ON
Semiconductor Sales Office.
DESCRIPTION AND PURPOSE:
In connection to ON Semiconductor’s Initial Product Change Notification, number 16091:
ON Semiconductor is notifying customers of its use of Copper Wire (in place of Gold Wire) on
their MOSFET Products in the TSOP6 Package. Products assembled with High Cell Density
(HD3e Silicon Platform) MOSFET Die will be affected.
The mold compound, die attach, and lead frame materials used for the TSOP6 Package will
not be changed. Reliability Qualification and full electrical characterization over temperature
have been performed showing no difference between the product builds.
Issue Date: 08-Oct-2008
Rev.14 Jun 2007
Page 1 of 3
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NTGS3455T1G Summary of contents
Page 1
... DESCRIPTION AND PURPOSE: In connection to ON Semiconductor’s Initial Product Change Notification, number 16091: ON Semiconductor is notifying customers of its use of Copper Wire (in place of Gold Wire) on their MOSFET Products in the TSOP6 Package. Products assembled with High Cell Density (HD3e Silicon Platform) MOSFET Die will be affected. ...
Page 2
... There is no change in electrical parametric performance. Characterization data is available upon request. CHANGED PART IDENTIFICATION: TSOP6 Products assembled with the Copper Wire from the ON Semiconductor facility in Seremban, Malaysia, will have a Finish Good Date Code representing Work Week 01, 2009 or newer. Issue Date: 08-Oct-2008 Rev ...
Page 3
... Final Product/Process Change Notification #16163 AFFECTED DEVICE LIST NTGS3433T1G NTGS3433T1 NTGS3441PT1G NTGS3441T1G NTGS3441T1H NTGS3441T1 NTGS3443T1G NTGS3443T1H NTGS3443T1 NTGS3443T2G NTGS3443T2H NTGS3446T1G NTGS3446T1 NTGS3455T1G NTGS3455T1H NTGS3455T1 Issue Date: 08-Oct-2008 Rev.14 Jun 2007 Page ...