STS1HNK60 STMicroelectronics, STS1HNK60 Datasheet - Page 2

• Manufacturer Part Number: STS1HNK60
• Description: MOSFET N-CH 600V 300MA 8-SOIC
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STS1HNK60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 156pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3530-2

STS1HNK60
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
ON/OFF
2/8
Rthj-amb
V
dv/dt (1)
Symbol
Symbol
SD
R
V
I
(BR)DSS
V
DM
P
I
I
V
DS(on)
V
GS(th)
T
DSS
GSS
DGR
TOT
I
I
T
stg
DS
GS
D
D
0.3A, di/dt 100A/µs, V
j
( )
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction-ambient Max
Parameter
DS
DD
= 0)
V
GS
(BR)DSS
= 0)
Parameter
C
GS
= 25°C
, T
GS
= 20 k )
j
= 0)
T
JMAX.
CASE
C
C
I
V
V
V
V
V
D
= 25°C
= 100°C
DS
DS
GS
DS
GS
= 1 mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= Max Rating
= Max Rating, T
= V
= ± 30 V
= 10 V, I
Test Conditions
GS
, I
GS
D
D
= 250 µA
= 0.5 A
= 0
C
= 125 °C
Min.
2.25
600
-65 to 150
Value
0.016
± 30
0.19
62.5
600
600
0.3
1.2
2
3
Typ.
3
8
Max.
±100
3.7
8.5
50
1
W/°C
°C/W
V/ns
Unit
Unit
°C
µA
µA
nA
W
V
V
V
A
A
A
V
V