ZXMP6A13GTA Diodes Zetex, ZXMP6A13GTA Datasheet - Page 4

• Manufacturer Part Number: ZXMP6A13GTA
• Description: MOSFET P-CH 60V 1.7A SOT223
• Manufacturer: Diodes Zetex

Specifications of ZXMP6A13GTA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 390 mOhm @ 900mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 219pF @ 30V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP6A13GTR

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Notes 5 & 6)
Diode Forward Voltage (Note 5)
Reverse recovery time (Note 6)
Reverse recovery charge (Note 6)
DYNAMIC CHARACTERISTICS (
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 7)
Total Gate Charge (Note 7)
Gate-Source Charge (Note 7)
Gate-Drain Charge (Note 7)
Turn-On Delay Time (Note 7)
Turn-On Rise Time (Note 7)
Turn-Off Delay Time (Note 7)
Turn-Off Fall Time (Note 7)
Notes:
ZXMP6A13G
Document Number DS32032 Rev. 4 - 2
5. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
6. For design aid only, not subject to production testing.
7. Switching characteristics are independent of operating junction temperatures.
Characteristic
Note 6
@T
)
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
www.diodes.com
Min
-1.0
4 of 8
-60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-0.85
21.1
19.3
25.7
20.5
0.74
11.2
Typ
219
1.8
2.9
5.9
1.5
1.6
2.2
5.7
⎯
⎯
⎯
⎯
⎯
0.390
0.595
±100
-0.95
Max
-0.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Diodes Incorporated
A Product Line of
Unit
μA
nA
nC
nC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
I
I
T
V
f= 1MHz
V
V
V
I
D
D
S
S
D
J
DS
GS
GS
GS
DS
DS
GS
GS
DD
= -250μA, V
= -0.8A, V
= -0.9A, di/dt= 100A/μs,
= -1A, R
=25°C
= -250μA, V
= -60V, V
= -15V, I
= -30V, V
= -30V, V
= ±20V, V
= -10V, I
= -4.5V, I
= -4.5V
= -10V
Test Condition
G
GS
≅ 6.0Ω
D
ZXMP6A13G
D
D
GS
GS
GS
= -0.9A
DS
= -0.9A
DS
GS
= -0.8A
= 0V, T
= 0V
= 0V
= -10V
= 0V
= V
= 0V
V
I
© Diodes Incorporated
D
December 2009
DS
GS
= -0.9A
J
= -30V
=25°C