FDD6778A Fairchild Semiconductor, FDD6778A Datasheet
FDD6778A
Specifications of FDD6778A
Related parts for FDD6778A
FDD6778A Summary of contents
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... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDD6778A FDD6778A ©2009 Fairchild Semiconductor Corporation FDD6778A Rev.C ® MOSFET General Description This N-Channel MOSFET has been designed specifically improve the overall efficiency of DC/DC converters using either = 9 ...
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... R is determined by the user’s board design. θJC θJA 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. ° based on starting mH ©2009 Fairchild Semiconductor Corporation FDD6778A Rev °C unless otherwise noted J Test Conditions = 250 µ 250 µA, referenced to 25 ° ...
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... T J Figure 3. Normalized On Resistance vs Junction Temperature 50 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 3 175 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDD6778A Rev °C unless otherwise noted 4 3 µ 2.0 2.5 3.0 Figure 100 125 150 175 ...
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... Switching Capability 100 10 THIS AREA IS LIMITED BY r DS(on) 1 SINGLE PULSE T = MAX RATED 6.2 C/W θ 0.1 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDD6778A Rev °C unless otherwise noted J 2000 1000 100 80 0 0.1 ...
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... Figure 13. Junction-to-Case Transient Thermal Response Curve 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 14. ©2009 Fairchild Semiconductor Corporation FDD6778A Rev °C unless otherwise noted J SINGLE PULSE 6.2 C/W θ RECTANGULAR PULSE DURATION (sec) SINGLE PULSE o R ...
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... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDD6778A Rev.C ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...