FDD8586 Fairchild Semiconductor, FDD8586 Datasheet - Page 2

• Manufacturer Part Number: FDD8586
• Description: MOSFET N-CH 20V 35A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8586

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 2480pF @ 10V
• Power - Max: 77W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Forward Transconductance Gfs (max / Min): 175 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 77 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8586TR

FDD8586/FDU8586 Rev. B
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting T
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
∆T
∆T
iss
oss
rss
g
g(TOT)
g(5)
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
J
= 25
o
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transcondductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C, L = 0.3mH, I
AS
= 31A ,V
Parameter
DD
= 18V, V
T
J
GS
= 25°C unless otherwise noted
= 10V.
I
I
25°C
V
V
V
D
D
V
I
25°C
V
V
V
T
V
V
f = 1MHz
f = 1MHz
V
V
V
V
V
V
I
I
DS
GS
GS
D
F
F
J
GS
GS
GS
GS
DS
DS
DD
GS
GS
GS
GS
GS
= 250µA, V
= 250µA, referenced to
= 35A, di/dt = 100A/µs
= 35A, di/dt = 100A/µs
= 250µA, referenced to
= 175°C
= 0V
= 16V,
= ±20V
= 0V to 10V
= 10V,I
= 10V, V
= 0V to 5V
= 0V, I
= 0V, I
= V
= 10V, I
= 4.5V, I
= 10V, I
= 10V, I
= 10V, R
2
Test Conditions
DS
, I
S
S
D
D
D
D
= 35A
= 15A
GS
D
D
GS
GS
= 35A
= 35A
= 35A
= 35A
= 33A
= 250µA
= 0V
= 0V,
= 10Ω
T
V
I
I
D
g
J
DD
= 1.0mA
= 150°C
= 35A
= 10V
Min
20
1.2
1865
14.6
Typ
0.89
0.82
-6.7
175
550
335
3.2
5.9
1.6
4.0
5.7
6.5
1.2
47
25
34
16
11
30
23
9
www.fairchildsemi.com
±100
Max
2480
250
1.25
730
445
2.5
5.5
8.5
8.9
1.2
18
20
75
40
48
22
45
35
1
mV/°C
Units
mV/°C
mΩ
µA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nC
ns
V
Ω
V
V
S