SI1051X-T1-GE3 Vishay, SI1051X-T1-GE3 Datasheet

MOSFET P-CH 8V 1.2A SC89-6

SI1051X-T1-GE3

Manufacturer Part Number
SI1051X-T1-GE3
Description
MOSFET P-CH 8V 1.2A SC89-6
Manufacturer
Vishay
Datasheet

Specifications of SI1051X-T1-GE3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
122 mOhm @ 1.2A, 4.5V
Drain To Source Voltage (vdss)
8V
Current - Continuous Drain (id) @ 25° C
1.2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
9.45nC @ 5V
Input Capacitance (ciss) @ Vds
560pF @ 4V
Power - Max
236mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Transistor Polarity
P Channel
Continuous Drain Current Id
1.2A
Drain Source Voltage Vds
-8V
On Resistance Rds(on)
198mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1051X-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1051X-T1-GE3
Manufacturer:
TI
Quantity:
131
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
Document Number: 74479
S10-2542-Rev. C, 08-Nov-10
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
PRODUCT SUMMARY
V
DS
- 8
(V)
A
Ordering Information: Si1051X-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
D
G
= 25 °C.
0.122 at V
0.141 at V
0.168 at V
0.198 at V
1
2
3
SC-89 (6-LEADS)
R
DS(on)
Top View
GS
GS
GS
GS
J
a
= - 4.5 V
= - 2.5 V
= - 1.8 V
= - 1.5 V
()
= 150 °C)
b, d
6
5
4
P-Channel 8 V (D-S) MOSFET
a
D
D
S
I
D
0.60
0.50
1.2
1.1
(A)
a
A
Q
= 25 °C, unless otherwise noted)
g
Steady State
5.91
T
T
T
T
T
(Typ.)
A
A
A
A
A
Marking Code
t 5 s
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
2
XX
Part # Code
Lot Traceability
and Date Code
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Load Switch for Portable Applications
Symbol
Symbol
T
R
J
V
V
I
P
, T
DM
thJA
Definition
I
I
GS
DS
D
S
D
stg
g
Tested
®
Typical
Power MOSFET
440
540
- 55 to 150
0.236
0.151
0.97
1.2
0.2
Limit
± 5
G
- 8
- 8
b, c
b, c
b, c
b, c
b, c
P-Channel MOSFET
Maximum
530
650
Vishay Siliconix
S
D
Si1051X
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
A
1

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SI1051X-T1-GE3 Summary of contents

Page 1

... V GS SC-89 (6-LEADS Top View Ordering Information: Si1051X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si1051X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... S10-2542-Rev. C, 08-Nov- °C, unless otherwise noted thru 2 1 1.5 2.0 2 Si1051X Vishay Siliconix 2.4 2.0 1.6 1.2 0 ° 125 °C C 0.0 0.0 0.3 0.6 0 Gate-to-Source Voltage (V) GS Transfer Characteristics Curves vs. Temp. 1000 800 C iss 600 400 C oss ...

Page 4

... Si1051X Vishay Siliconix TYPICAL CHARACTERISTICS ( 150 °C J 0.1 0.01 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0 250 µA D 0.6 0.5 0.4 0.3 0 Temperature (°C) J Threshold Voltage www.vishay.com °C, unless otherwise noted °C J 0.8 1.0 1.2 75 100 125 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74479. Document Number: 74479 S10-2542-Rev. C, 08-Nov- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si1051X Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 540 ° ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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