SI2343DS-T1-E3 Vishay, SI2343DS-T1-E3 Datasheet

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SI2343DS-T1-E3

Manufacturer Part Number
SI2343DS-T1-E3
Description
MOSFET P-CH 30V 3.1A SOT23-3
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI2343DS-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
53 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 10V
Input Capacitance (ciss) @ Vds
540pF @ 15V
Power - Max
750mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.053 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.1 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-4A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
53mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2343DS-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2343DS-T1-E3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
SI2343DS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2343DS-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 72079
S09-0133-Rev. B, 02-Feb-09
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 30
(V)
0.086 at V
0.053 at V
R
DS(on)
J
a, b
= 150 °C)
GS
a
GS
= - 4.5 V
(Ω)
= - 10 V
Ordering Information: Si2343DS-T1
P-Channel 30-V (D-S) MOSFET
a, b
a, b
A
G
S
I
D
- 4.0
- 3.1
= 25 °C, unless otherwise noted
Steady State
Steady State
(A)
Si2343DS-T1-E3 (Lead (Pb)-free)
Si2343DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
T
T
T
T
1
2
A
A
A
A
t ≤ 5 s
Si2343DS (F3)*
= 25 °C
= 70 °C
= 25 °C
= 70 °C
* Marking Code
(SOT-23)
Top View
TO-236
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• Load Switch
• PA Switch
3
Symbol
Symbol
T
R
R
J
Available
TrenchFET
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
D
S
D
stg
®
Power MOSFET
Typical
- 4.0
- 3.2
- 1.0
1.25
120
5 s
0.8
75
40
- 55 to 150
± 20
- 30
- 15
Steady State
Maximum
- 3.1
- 2.5
- 0.6
0.75
0.48
100
166
50
Vishay Siliconix
Si2343DS
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI2343DS-T1-E3

SI2343DS-T1-E3 Summary of contents

Page 1

... FEATURES • Halogen-free According to IEC 61249-2-21 I (A) D Available - 4.0 • TrenchFET - 3.1 APPLICATIONS • Load Switch • PA Switch TO-236 (SOT-23 Top View Si2343DS (F3)* * Marking Code Si2343DS-T1-E3 (Lead (Pb)-free) Si2343DS-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° °C ...

Page 2

... Si2343DS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static V Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... 4 Total Gate Charge (nC) g Gate Charge Document Number: 72079 S09-0133-Rev. B, 02-Feb- 1000 800 600 400 200 Si2343DS Vishay Siliconix 125 ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si2343DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 1.4 75 100 125 150 100 I DM ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72079. Document Number: 72079 S09-0133-Rev. B, 02-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si2343DS Vishay Siliconix Notes ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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