FDB8896 Fairchild Semiconductor, FDB8896 Datasheet

MOSFET N-CH 30V 93A TO-263AB

FDB8896

Manufacturer Part Number
FDB8896
Description
MOSFET N-CH 30V 93A TO-263AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDB8896

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.7 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
93A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
67nC @ 10V
Input Capacitance (ciss) @ Vds
2525pF @ 15V
Power - Max
80W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0057 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
19 A
Power Dissipation
80000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDB8896
FDB8896TR

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Quantity
Price
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©2008 Fairchild Semiconductor Corporation
FDB8896
N-Channel PowerTrench
30V, 93A, 5.7m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
Applications
• DC/DC converters
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
R
DS(ON)
D
GS
J
DSS
AS
D
Symbol
, T
JC
JA
JA
Device Marking
STG
FDB8896
and fast switching speed.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263 ( Note 3)
Thermal Resistance Junction to Ambient TO-263, 1in
GATE
SOURCE
FDB SERIES
TO-263AB
amb
C
C
= 25
= 25
o
C
FDB8896
= 25
Device
o
o
C, V
C, V
o
C, V
®
(FLANGE)
GS
GS
DRAIN
MOSFET
GS
= 10V) (Note 1)
= 4.5V) (Note 1)
Parameter
T
= 10V, with R
C
= 25°C unless otherwise noted
TO-263AB
Package
JA
= 43
Features
• r
• r
• High performance trench technology for extremely low
• Low gate charge
• High power and current handling capability
r
DS(ON)
DS(ON)
DS(ON)
o
2
C/W)
copper pad area
Reel Size
330mm
= 5.7m , V
= 6.8m , V
G
GS
GS
= 10V, I
= 4.5V, I
D
Tape Width
S
24mm
-55 to 175
Ratings
Figure 4
D
D
0.53
1.88
= 35A
= 35A
30
93
85
19
74
80
62
43
20
May 2008
Quantity
800 units
FDB8896 Rev. B2
Units
W/
o
o
o
C/W
C/W
C/W
mJ
o
W
tm
V
A
V
A
A
A
C
o
C

Related parts for FDB8896

FDB8896 Summary of contents

Page 1

... C Parameter 10V) (Note 4.5V) (Note 10V, with C/ copper pad area Package Reel Size TO-263AB 330mm May 2008 tm = 10V 35A 4.5V 35A Ratings Units Figure 0. -55 to 175 C o 1. C/W Tape Width Quantity 24mm 800 units FDB8896 Rev. B2 ...

Page 2

... 35A 20A 35A, dI /dt = 100A 35A, dI /dt = 100A 27V 10V. GS Min Typ Max 150 250 100 1.2 - 2.5 - 0.0049 0.0057 - 0.0059 0.0068 - 0.0078 0.0094 - 2525 - - 490 - - 300 - - 2 15V DD - 2.3 3.0 = 35A - 1.0mA - 5 9 167 - 102 - - 153 - - 1. 1 Units FDB8896 Rev. B2 ...

Page 3

... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE V = 10V 4. 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDB8896 Rev. B2 175 ...

Page 4

... AS DSS (L/R)ln[(I *R)/(1.3*RATED +1] AS DSS DD STARTING STARTING T = 150 TIME IN AVALANCHE (ms) AV Capability V = 10V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.25 0.5 0.75 1.0 1. DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( 100 1.5 = 35A 200 FDB8896 Rev. B2 ...

Page 5

... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS OSS Figure 14. Gate Charge Waveforms for Constant I = 250 120 160 JUNCTION TEMPERATURE ( 15V DD WAVEFORMS IN DESCENDING ORDER 35A 16A GATE CHARGE (nC) g Gate Current 200 50 FDB8896 Rev. B2 ...

Page 6

... Figure 19. Switching Time Test Circuit ©2008 Fairchild Semiconductor Corporation DUT I AS 0.01 0 Figure 16. Unclamped Energy Waveforms gs2 DD - DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g( g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDB8896 Rev 10V 90% ...

Page 7

... Fairchild Semiconductor Corporation , and the application’s ambient never exceeded (EQ 0.1 is (0.645) DM Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 26.51+ 19.84/(0.262+Area) EQ 26.51+ 128/(1.69+Area) EQ (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDB8896 Rev ...

Page 8

... PSPICE Electrical Model .SUBCKT FDB8896 rev December 2003 2.3e 2.3e-9 Cin 6 8 2.3e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 5.5e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 2.7e-9 RLgate RLdrain RLsource ...

Page 9

... SABER Electrical Model rev December 2003 template FDB8896 n2,n1,n3 =m_temp electrical n2,n1,n3 number m_temp=25 { var i iscl dp..model dbodymod = (isl=4e-12,ikf=10,nl=1.01,rs=2.6e-3,trs1=8e-4,trs2=2e-7,cjo=8.8e-10,m=0.57,tt=1e-16,xti=2.2) dp..model dbreakmod = (rs=8e-2,trs1=1e-3,trs2=-8.9e-6) dp..model dplcapmod = (cjo=9.4e-10,isl=10e-30,nl=10,m=0.4) m..model mmedmod = (type=_n,vto=1.98,kp=10,is=1e-30, tox=1) m..model mstrongmod = (type=_n,vto=2.4,kp=350,is=1e-30, tox=1) m..model mweakmod = (type=_n,vto=1.68,kp=0.05,is=1e-30, tox=1,rs=0.1) sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-3) sw_vcsp ...

Page 10

... RTHERM1 TH 6 3.0e-2 RTHERM2 6 5 1.0e-1 RTHERM3 5 4 1.8e-1 RTHERM4 4 3 2.8e-1 RTHERM5 3 2 4.5e-1 RTHERM6 2 TL 4.6e-1 SABER Thermal Model SABER thermal model FDB8896T template thermal_model th tl thermal_c th ctherm.ctherm1 th 6 =9e-4 ctherm.ctherm2 6 5 =1e-3 ctherm.ctherm3 5 4 =2e-3 ctherm.ctherm4 4 3 =3e-3 ctherm ...

Page 11

... Fairchild Semiconductor. The datasheet is for reference information only. The Power Franchise ® tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® Definition ® Rev. I34 FDB8896 Rev. B2 ...

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