STD85N3LH5 STMicroelectronics, STD85N3LH5 Datasheet

MOSFET N-CH 30V 80A DPAK

STD85N3LH5

Manufacturer Part Number
STD85N3LH5
Description
MOSFET N-CH 30V 80A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STD85N3LH5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 5V
Input Capacitance (ciss) @ Vds
1850pF @ 25V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 22 V
Continuous Drain Current
80 A
Power Dissipation
70000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
40A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
4.6mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Fall Time
10.8 ns
Rise Time
14 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7976-2
STD85N3LH5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD85N3LH5
Manufacturer:
ST
Quantity:
120
Part Number:
STD85N3LH5
Manufacturer:
TI/德州仪器
Quantity:
20 000
Part Number:
STD85N3LH5-H
Manufacturer:
ST
0
Part Number:
STD85N3LH5S
Manufacturer:
ST
0
Features
Application
Switching applications
Description
This product utilizes the 5
rules of ST’s proprietary STripFET
The lowest available R
packages, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
Table 1.
July 2010
STD85N3LH5
STU85N3LH5
STP85N3LH5
R
Extremely low on-resistance R
High avalanche ruggedness
Low gate drive power losses
DS(on)
Type
STD85N3LH5
STP85N3LH5
STU85N3LH5
Order codes
* Q
Device summary
g
industry benchmark
N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220, IPAK
V
30 V
DSS
DS(on)
th
generation of design
*Q
R
DS(on)
< 0.005 Ω
g
, in the standard
DS(on)
TM
max.
technology.
85N3LH5
Marking
Doc ID 13833 Rev 7
80 A
I
D
STP85N3LH5, STU85N3LH5
Figure 1.
STripFET™ V Power MOSFET
DPAK
Package
TO-220
DPAK
IPAK
1
Internal schematic diagram
3
TO-220
STD85N3LH5
1
2
3
Tape and reel
Packaging
Tube
IPAK
www.st.com
1
2
1/16
3
16

Related parts for STD85N3LH5

STD85N3LH5 Summary of contents

Page 1

... STU85N3LH5 July 2010 STP85N3LH5, STU85N3LH5 STripFET™ V Power MOSFET max. I DS(on) D < 0.005 Ω DS(on) Figure 1. TM technology the standard g Marking 85N3LH5 Doc ID 13833 Rev 7 STD85N3LH5 3 1 DPAK TO-220 Internal schematic diagram Package Packaging DPAK Tape and reel TO-220 Tube IPAK ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STD85N3LH5, STP85N3LH5, STU85N3LH5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Doc ID 13833 Rev ...

Page 3

... STD85N3LH5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Derating factor (3) E Single pulse avalanche energy AS T Storage temperature stg T Max. operating junction temperature j 1 ...

Page 4

... Output capacitance C oss Reverse transfer C rss capacitance Q Total gate charge g Q Gate-source charge gs Q Gate-drain charge gd Pre gs1 charge Post V Q gs2 charge R Gate input resistance G 4/16 STD85N3LH5, STP85N3LH5, STU85N3LH5 Parameter Test conditions I = 250 µ V,Tc = 125 ° ± SMD version ...

Page 5

... STD85N3LH5 Table 6. Switching on/off (inductive load) Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Normalized B VDSS 6/16 STD85N3LH5, STP85N3LH5, STU85N3LH5 Figure 3. Figure (A) 160 140 120 100 temperature Figure 7. Doc ID 13833 Rev 7 Thermal impedance Transfer characteristics Static drain-source on resistance AM03359v1 (V) ...

Page 7

... STD85N3LH5 Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature Doc ID 13833 Rev 7 Electrical characteristics 7/16 ...

Page 8

... FAST L=100µH G D.U.T. DIODE Ω Figure 17. Unclamped inductive waveform 8/16 STD85N3LH5, STP85N3LH5, STU85N3LH5 Figure 14. Gate charge test circuit 3.3 2200 µF µ =20V AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 0 ...

Page 9

... STD85N3LH5 Figure 19. Gate charge waveform Vds Vgs(th) Qgs1 Qgs2 Qgd Id Vgs Doc ID 13833 Rev 7 Test circuit 9/16 ...

Page 10

... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/16 STD85N3LH5, STP85N3LH5, STU85N3LH5 Doc ID 13833 Rev 7 ® ...

Page 11

... STD85N3LH5 Dim L20 L30 TO-220 type A mechanical data Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 ∅P 3.75 Q 2.65 Doc ID 13833 Rev 7 Package mechanical data mm Typ Max 4.60 0.88 1.70 0.70 15.75 1.27 10.40 2.70 5.15 1.32 6 ...

Page 12

... Package mechanical data DIM (L1 12/16 STD85N3LH5, STP85N3LH5, STU85N3LH5 TO-251 (IPAK) mechanical data mm. min. typ 2.20 0.90 0.64 5.20 0.45 0.48 6.00 6.40 2.28 4.40 16.10 9.00 0.80 0. Doc ID 13833 Rev 7 max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 4.60 9 ...

Page 13

... STD85N3LH5 DIM TO-252 (DPAK) mechanical data mm. min. typ 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.40 4.70 2.28 4.40 9.35 1 2.80 0.80 0.60 0. Doc ID 13833 Rev 7 Package mechanical data max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4 ...

Page 14

... D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7 15.7 14/16 STD85N3LH5, STP85N3LH5, STU85N3LH5 TAPE AND REEL SHIPMENT inch MAX. MIN. MAX. 7 0.267 0.275 10.6 0.409 0.417 12.1 0.476 1.6 0.059 0.063 0.059 1.85 0.065 0.073 7.6 0.291 0.299 2.75 0.100 0.108 4 ...

Page 15

... STD85N3LH5 6 Revision history Table 8. Document revision history Date 19-Oct-2007 20-Feb-2008 21-Jul-2008 20-Aug-2008 25-Sep-2008 22-Jan-2009 01-Jul-2010 Revision 1 First release 2 Minor text changes to improve readability – Added new package, mechanical data: TO-220 Figure 2: Safe operating area – 3 Figure 7: Static drain-source on resistance – Table 2: Absolute maximum ratings – ...

Page 16

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 16/16 STD85N3LH5, STP85N3LH5, STU85N3LH5 Please Read Carefully: © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies www ...

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