STD50N03L STMicroelectronics, STD50N03L Datasheet - Page 8

• Manufacturer Part Number: STD50N03L
• Description: MOSFET N-CH 30V 40A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD50N03L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 1434pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.01 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7970-2; STD50N03L

Test circuit
3
8/16
Figure 12. Switching times test circuit for
Figure 14. Test circuit for inductive load
Figure 16. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 13. Gate charge test circuit
Figure 15. Unclamped Inductive load test
Figure 17. Switching time waveform
circuit
STD50N03L - STD50N03L-1