FDMS8670 Fairchild Semiconductor, FDMS8670 Datasheet - Page 3

• Manufacturer Part Number: FDMS8670
• Description: MOSFET N-CH 30V 24A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS8670

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.6 mOhm @ 24A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 3940pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 42 A
• Power Dissipation: 78000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS8670TR

©2008 Fairchild Semiconductor Corporation
FDMS8670 Rev.C
Typical Characteristics
150
100
150
120
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
Figure 3. Normalized On- Resistance
90
60
30
Figure 1.
0
0
0
-75
Figure 5. Transfer Characteristics
0
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
V
V
I
D
GS
DS
-50
vs Junction Temperature
= 24A
= 5V
= 10V
1
V
T
V
-25
On-Region Characteristics
DS
J
GS
,
1
V
V
V
,
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
GS
GS
GS
DRAIN TO SOURCE VOLTAGE (V)
= 10V
= 4V
= 4.5V
0
T
J
= 150
2
25
o
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
C
2
50
T
J
3
= 25°C unless otherwise noted
75
T
J
T
= -55
J
V
3
o
100 125 150
= 25
C )
GS
V
o
4
GS
C
= 3.5V
o
C
= 3V
5
4
3
0.001
0.01
100
800
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
10
10
8
6
4
2
0
1
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
GS
3
V
V
0.2
SD
GS
= 0V
T
J
T
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
V
= 150
= 3V
J
On-Resistance vs Gate to
GS
= 25
I
4
Source Voltage
D
Source to Drain Diode
,
,
GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
DRAIN CURRENT(A)
I
o
D
o
C
0.4
50
C
= 24A
5
T
J
V
= 125
GS
0.6
6
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
= 3.5V
o
C
7
100
0.8
T
J
8
= -55
V
V
V
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T
GS
GS
GS
J
1.0
= 25
o
= 4V
= 10V
= 4.5V
C
9
o
C
150
1.2
10