IRF530NSTRLPBF International Rectifier, IRF530NSTRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRF530NSTRLPBF
• Description: MOSFET N-CH 100V 17A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF530NSTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 920pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 3.8 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 24.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF530NSTRLPBF; IRF530NSTRLPBFTR

4
1600
1200
800
400
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
C iss
C oss
C rss
V
V
0.4
DS
SD
T = 175 C
Forward Voltage
V
C
C
C
J
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
0.6
=
=
=
=
0V,
C
C
C
°
gs
gd
ds
+ C
+ C
0.8
10
f = 1MHz
gd ,
gd
T = 25 C
J
C
1.0
ds
°
SHORTED
V
GS
1.2
= 0 V
100
1.4
1000
100
0.1
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
Fig 6. Typical Gate Charge Vs.
I =
1
D
Tc = 25°C
Tj = 175°C
Single Pulse
9.0A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
G
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
20
V
V
V
DS
DS
DS
FOR TEST CIRCUIT
SEE FIGURE
www.irf.com
100
= 80V
= 50V
= 20V
100µsec
1msec
10msec
30
13
1000
40