IRFS5615TRLPBF International Rectifier, IRFS5615TRLPBF Datasheet - Page 5

• Manufacturer Part Number: IRFS5615TRLPBF
• Description: MOSFET N-CH 150V 33A D2PAK
• Manufacturer: International Rectifier

Specifications of IRFS5615TRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 50V
• Power - Max: 144W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 33A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 34.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 33 A
• Power Dissipation: 144 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 26 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFS5615TRLPBFTR

Fig 15. Maximum Avalanche Energy Vs. Temperature
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Fig 12. On-Resistance Vs. Gate Voltage
0.35
0.25
0.15
0.05
0.4
0.3
0.2
0.1
120
100
80
60
40
20
100
0
0.1
0
10
1.0E-06
1
4
25
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
Starting T J , Junction Temperature (°C)
6
V GS, Gate -to -Source Voltage (V)
50
8
Duty Cycle = Single Pulse
0.10
0.05
TOP
BOTTOM 1.0% Duty Cycle
I D = 21A
0.01
75
10
1.0E-05
T J = 125°C
T J = 25°C
Fig 14. Typical Avalanche Current Vs.Pulsewidth
12
100
Single Pulse
14
125
16
I D = 21A
150
18
1.0E-04
20
175
tav (sec)
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long as neither
3. Equation below based on circuit and waveforms shown in
4. P
5. B
6. I
7. ∆T
Tjmax nor Iav (max) is exceeded
Purely a thermal phenomenon and failure occurs at a
Figures 17a, 17b.
avalanche pulse.
voltage increase during avalanche).
T
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
av
av =
thJC
D (ave)
V
jmax
500
450
400
350
300
250
200
150
100
= Allowable avalanche current.
=
50
= Rated breakdown voltage (1.3 factor accounts for
Average time in avalanche.
(D, t
0
Allowable rise in junction temperature, not to exceed
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
(assumed as 25°C in Figure 14, 15).
1.0E-03
25
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
Starting T J , Junction Temperature (°C)
50
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
75
= P
1.0E-02
100
D (ave)
jmax
av
av
. This is validated for
·f
) = DT/ Z
·t
th
TOP
BOTTOM 21A
av
125
]
thJC
150
I D
5.3A
2.8A
1.0E-01
175
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