IRF6636 International Rectifier, IRF6636 Datasheet - Page 4

• Manufacturer Part Number: IRF6636
• Description: MOSFET N-CH 20V 18A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6636

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2420pF @ 10V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.5 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 6.2 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 19 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6636TR

IRF6636
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
100000
10000
1000
1000
1000
100
100
0.1
100
Fig 6. Typical Transfer Characteristics
10
10
Fig 4. Typical Output Characteristics
1
1
0.1
1
1
V DS = 10V
≤ 60µs PULSE WIDTH
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
C rss
C iss
C oss
2.5V
T J = 150°C
T J = 25°C
T J = -40°C
1
2
10
≤ 60µs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
3
TOP
BOTTOM
100
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
100
4
Fig 7. Normalized On-Resistance vs. Temperature
1000
100
10
1.5
1.0
0.5
50
40
30
20
10
1
Fig 5. Typical Output Characteristics
0
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
I D = 18A
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
V DS , Drain-to-Source Voltage (V)
20
T J , Junction Temperature (°C)
1
2.5V
40
I D , Drain Current (A)
V GS = 10V
V GS = 4.5V
≤ 60µs PULSE WIDTH
Tj = 150°C
60
10
Vgs = 3.0V
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
80
T J = 25°C
TOP
BOTTOM
100
100
www.irf.com
120
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
140