MTP50P03HDLG ON Semiconductor, MTP50P03HDLG Datasheet - Page 7

• Manufacturer Part Number: MTP50P03HDLG
• Description: MOSFET P-CH 30V 50A TO220AB
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of MTP50P03HDLG

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 5V
• Input Capacitance (ciss) @ Vds: 4900pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 50 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.025Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±15V
• Drain Current (max): 50A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MTP50P03HDLGOS

0.01
1.0E−05
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
SINGLE PULSE
0.01
1.0E−04
Figure 15. Diode Reverse Recovery Waveform
I
S
1.0E−03
Figure 14. Thermal Response
t
p
http://onsemi.com
MTP50P03HDL
di/dt
t
a
t, TIME (s)
7
1.0E−02
t
rr
t
P
b
I
(pk)
S
0.25 I
DUTY CYCLE, D = t
t
1
S
t
2
1.0E−01
0.1
1
TIME
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
(t) = r(t) R
− T
1.0E+00
C
= P
(pk)
qJC
1
R
qJC
(t)
1.0E+01