FDV301N Fairchild Semiconductor, FDV301N Datasheet
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FDV301N
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FDV301N Summary of contents
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... Replace multiple NPN digital transistors with one DMOS FET. TM SuperSOT -8 SO unless other wise noted A June 2009 2.7 V DS(ON 4.5 V. DS(ON) GS < 1.06V. GS(th) SOIC-16 SOT-223 FDV301N 25 8 0.22 0.5 0.35 -55 to 150 6.0 357 °C/W FDV301N Rev.F1 Vcc OUT GND Units °C kV ...
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... GS GEN Min Typ Max 1 0 Min Typ Max 55° 100 o C -2.1 0.70 0.85 1.06 3 =125°C 6 3.1 4 0.2 0.2 9.5 6 1.3 3 3.5 8 3.5 8 0.49 0.7 0.22 0.07 0.29 0.8 1.2 (Note) FDV301N Rev.F1 Units µ Units µA µ ...
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... DRAIN CURRENT (A) D Drain Current and Gate Voltage . I = 0.2A D 25°C 125°C 2 GATE TO SOURCE VOLTAGE ( Resistance Variation with T = 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORW A RD VOLTAGE (V) SD Body Diode Forward Voltage FDV301N Rev. 1.2 ...
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... Figure 8. Capacitance Characteristics . 0.001 Figure 10. Single Pulse Maximum Power 0.01 0 TIM E (sec rss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =357° C 25°C A 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. R ( 357 °C/W JA P(pk ( Duty Cycle FDV301N Rev.F1 C iss C oss 2 5 100 300 ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDV301N Rev.F1 F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ ...