BSS84 Fairchild Semiconductor, BSS84 Datasheet - Page 4
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BSS84
Manufacturer Part Number
BSS84
Description
MOSFET P-CH 50V 130MA SOT-23
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet
1.BSS84.pdf
(5 pages)
Specifications of BSS84
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 Ohm @ 100mA, 5V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
130mA
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
1.3nC @ 5V
Input Capacitance (ciss) @ Vds
73pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
10 Ohm @ 5 V
Forward Transconductance Gfs (max / Min)
0.6 S
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.13 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
10Ohm
Drain-source On-volt
50V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Dc
1205
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSS84TR
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Typical Characteristics
0.001
0.01
0.1
5
4
3
2
1
0
1
Figure 9. Maximum Safe Operating Area.
0.001
Figure 7. Gate Charge Characteristics.
0
1
0.01
0.1
R
0.0001
I
1
D
DS(ON)
SINGLE PULSE
R
= -0.10A
JA
T
V
A
GS
= 350
LIMIT
= 25
= -5V
0.2
D = 0.5
o
o
C
C/W
0.2
0.1
0.05
-V
0.02
DS
0.01
, DRAIN-SOURCE VOLTAGE (V)
Q
SINGLE PULSE
g
0.001
, GATE CHARGE (nC)
0.4
DC
10
1s
Figure 11. Transient Thermal Response Curve.
V
DS
10s
0.6
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
= -8V
100ms
10ms
0.01
-25V
1ms
0.8
-30V
100us
100
1
0.1
t
1
, TIME (sec)
100
80
60
40
20
0
5
4
3
2
1
0
0.01
0
Figure 8. Capacitance Characteristics.
Figure 10. Single Pulse Maximum
1
10
-V
0.1
DS
Power Dissipation.
, DRAIN TO SOURCE VOLTAGE (V)
C
C
C
ISS
OSS
RSS
10
20
t
1
, TIME (sec)
1
P(pk)
Duty Cycle, D = t
T
R
J
30
R
- T
JA
JA
(t) = r(t) * R
A
t
= 350
100
1
= P * R
t
2
SINGLE PULSE
R
10
JA
T
o
A
= 350°C/W
C/W
40
= 25°C
JA
1
f = 1 MHz
V
JA
(t)
/ t
GS
BSS84 Rev B(W)
2
= 0 V
1000
100
50