2N7002T Fairchild Semiconductor, 2N7002T Datasheet
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Manufacturer Part Number
2N7002T
Description
MOSFET N-CH 60V 115MA SOT-523F
Manufacturer
Fairchild Semiconductor
Specifications of 2N7002T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 Ohm @ 50mA, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
115mA
Vgs(th) (max) @ Id
2V @ 250µA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SOT-523F
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.5 Ohm @ 5 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.115 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N7002TTR
Available stocks
Manufacturer:
FAIRCHILD/仙童
© 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A
2N7002T
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,
V
V
V
I
T
T
P
R
D
J
STG
DSS
DGR
GSS
D
Symbol
Symbol
θJA
Drain-Source Voltage
Drain-Gate Voltage R
Gate-Source Voltage
Drain Current
Junction Temperature
Storage Temperature Range
Total Device Dissipation
Derating above T
Thermal Resistance, Junction to Ambient *
A
= 25°C
GS
Parameter
Parameter
≤
D
1.0MΩ
SOT - 523F
Marking : AA
T
a
= 25°C unless otherwise noted
Continuous @ 100°C
Pulsed
Continuous
G
S
Pulsed
Continuous
1
-55 to +150
Value
Value
±20
±40
115
800
150
200
625
1.6
60
60
73
mW/°C
Units
Units
www.fairchildsemi.com
October 2007
°C/W
mW
mA
°C
°C
V
V
V
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2N7002T Summary of contents
... Total Device Dissipation D Derating above T = 25° Thermal Resistance, Junction to Ambient * θJA * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size, © 2007 Fairchild Semiconductor Corporation 2N7002T Rev SOT - 523F Marking : 25°C unless otherwise noted a Parameter ≤ ...
... Output Capacitance oss C Reverse Transfer Capacitance rss Switching Characteristics t Turn-On Delay Time D(ON) t Turn-Off Delay Time D(OFF) Note1 : Short duration test pulse used to minimize self-heating effect © 2007 Fairchild Semiconductor Corporation 2N7002T Rev 25°C unless otherwise noted C Test Condition V = 0V, I =10uA 60V ...
... J Figure 5. Transfer Characteristics 1 - 10V 0.6 0.4 0.2 0 GATE-SOURCE VOLTAGE (V) GS © 2007 Fairchild Semiconductor Corporation 2N7002T Rev. A Figure 2. On-Resistance Variation with Gate 3.0 2.5 4V 2 Figure 4. On-Resistance Variation with 50 100 150 o C) Figure 6. Gate Threshold Variation with 2.5 o 150 C 2 ...
... Typical Performance Characteristics Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature 150 C 100 0.0 0.2 0 Body Diode Forward Voltage [V] SD © 2007 Fairchild Semiconductor Corporation 2N7002T Rev. A Figure 8. Power Derating 250 200 150 100 o - 0.6 0.8 1 100 125 150 ...
... Package Dimensions © 2007 Fairchild Semiconductor Corporation 2N7002T Rev. A SOT-523F 5 Dimensions in Millimeters www.fairchildsemi.com ...
... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation 2N7002T Rev. A Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...
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