ZXMN2A01FTC Diodes Zetex, ZXMN2A01FTC Datasheet - Page 2

• Manufacturer Part Number: ZXMN2A01FTC
• Description: MOSFET N-CHAN 20V SOT23-3
• Manufacturer: Diodes Zetex

Specifications of ZXMN2A01FTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 303pF @ 15V
• Power - Max: 625mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
ZXMN2A01F
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
S E M I C O N D U C T O R S
A
A
=25°C (a)
=25°C (b)
V
V
GS
GS
GS
=10V; T
=10V; T
=10V; T
A
A
A
=25°C (a)
=25°C (b)
=70°C (b)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
2
D
D
j
DSS
GS
:T
θJA
θJA
stg
-55 to +150
VALUE
LIMIT
1.29
200
155
625
806
2.2
1.7
1.9
6.4
20
8
8
5
12
ISSUE 2 - FEBRUARY 2006
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
mW
mW
°C
V
V
A
A
A
A