FQNL1N50BBU Fairchild Semiconductor, FQNL1N50BBU Datasheet

MOSFET N-CH 500V 0.27A TO-92L

FQNL1N50BBU

Manufacturer Part Number
FQNL1N50BBU
Description
MOSFET N-CH 500V 0.27A TO-92L
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQNL1N50BBU

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 Ohm @ 135mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
270mA
Vgs(th) (max) @ Id
3.7V @ 250µA
Gate Charge (qg) @ Vgs
5.5nC @ 10V
Input Capacitance (ciss) @ Vds
150pF @ 25V
Power - Max
1.5W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2001 Fairchild Semiconductor Corporation
FQNL1N50B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power
factor correction, electronic lamp ballast based on half
bridge.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
I
E
dv/dt
P
T
T
R
D
DM
AR
J
L
Symbol
DSS
GSS
AR
D
Symbol
, T
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Ambient
G
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
S
C
Parameter
= 25°C)
Parameter
T
C
C
C
FQNL Series
= 25°C unless otherwise noted
TO-92L
= 25°C)
= 100°C)
(Note 1)
(Note 1)
(Note 1)
(Note 2)
Features
• 0.27A, 500V, R
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical 3.0 pF)
• Fast switching
• Improved dv/dt capability
Typ
DS(on)
--
G
FQNL1N50B
!
!
-55 to +150
= 9.0
0.012
0.27
0.17
1.08
0.27
0.15
300
500
4.5
1.5
! "
! "
30
!
!
!
!
S
D
"
"
"
"
"
"
@V
Max
83
QFET
GS
= 10 V
March 2001
Units
W/°C
Units
Rev. A, March 2001
°C/W
V/ns
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQNL1N50BBU Summary of contents

Page 1

... T L 1/8" from case for 5 seconds Thermal Characteristics Symbol R Thermal Resistance, Junction-to-Ambient JA ©2001 Fairchild Semiconductor Corporation Features • 0.27A, 500V, R • Low gate charge ( typical 4.0 nC) • Low Crss ( typical 3.0 pF) • Fast switching • Improved dv/dt capability TO-92L FQNL Series T = 25° ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature ≤ 1.4A, di/dt ≤ 200A/us, V ≤ DSS, 3. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 A GS ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage. 200 C 150 iss C oss 100 50 C rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics. ©2001 Fairchild Semiconductor Corporation ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 10V ※ Note : T = 25℃ ...

Page 4

... 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Note : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 0.30 0. 100 s 0. 100 ms 0.15 0.10 ...

Page 5

... 3mA 3mA Resistive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveform Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 4.90 0.50 0.10 3.90 ©2001 Fairchild Semiconductor Corporation TO-92L 0.20 0.70MAX. 0.80 0.10 1.00MAX. 1.27TYP [1.27 ] 0.20 2.54 TYP 0.20 0.45 0.10 Rev. A, March 2001 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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