SI2301CDS-T1-GE3 Vishay, SI2301CDS-T1-GE3 Datasheet

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SI2301CDS-T1-GE3

Manufacturer Part Number
SI2301CDS-T1-GE3
Description
MOSFET P-CH 20V 3.1A SOT23-3
Manufacturer
Vishay
Type
Power MOSFETr

Specifications of SI2301CDS-T1-GE3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
112 mOhm @ 2.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Input Capacitance (ciss) @ Vds
405pF @ 10V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.112 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.3 A
Power Dissipation
860 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-3.1A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
142mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-23
Rohs Compliant
Yes
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2301CDS-T1-GE3TR

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Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.
Document Number: 68741
S10-2430-Rev. C, 25-Oct-10
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
MOSFET PRODUCT SUMMARY
V
DS
- 20
(V)
C
= 25 °C.
0.112 at V
0.142 at V
R
DS(on)
GS
GS
J
= - 4.5 V
= - 2.5 V
= 150 °C)
()
b, d
Ordering Information: Si2301CDS-T1-E3 (Lead (Pb)-free)
P-Channel 20 V (D-S) MOSFET
I
D
- 3.1
- 2.7
(A)
Steady State
a
G
S
5 s
A
Si2301CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
Q
= 25 °C, unless otherwise noted)
1
2
3.3 nC
g
(Typ.)
Si2301CDS (N1)*
* Marking Code
(SOT-23)
Top View
TO-236
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Symbol
R
R
thJA
thJF
3
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• Load Switch
D
Definition
Symbol
T
J
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
stg
®
Typical
Power MOSFET
120
62
- 55 to 150
- 0.72
- 2.3
- 1.8
0.86
0.55
Limit
- 3.1
- 2.5
- 1.3
- 20
- 10
± 8
1.6
1.0
Maximum
b, c
b, c
b, c
b, c
b, c
Vishay Siliconix
145
78
Si2301CDS
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI2301CDS-T1-GE3

SI2301CDS-T1-GE3 Summary of contents

Page 1

... Q (Typ Definition - 3.1 • TrenchFET 3.3 nC • Compliant to RoHS Directive 2002/95/EC - 2.7 APPLICATIONS • Load Switch TO-236 (SOT-23 Top View Si2301CDS (N1)* * Marking Code Si2301CDS-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted) A Symbol ° ° ° ° ° ° °C ...

Page 2

... Si2301CDS Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 68741 S10-2430-Rev. C, 25-Oct- 1 1.5 2 Si2301CDS Vishay Siliconix 1.00 0. ° ° 125 °C C 0.00 0.0 0.3 0.6 0 Gate-to-Source Voltage (V) GS Transfer Characteristics 800 600 C iss 400 200 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si2301CDS Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted 150 ° °C J 0.1 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.3 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 1.0 1.2 1 250 µ 100 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68741. Document Number: 68741 S10-2430-Rev. C, 25-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si2301CDS Vishay Siliconix 1 10 100 Notes Duty Cycle ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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