FDN360P Fairchild Semiconductor, FDN360P Datasheet - Page 4

• Manufacturer Part Number: FDN360P
• Description: MOSFET P-CH 30V 2A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN360P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Input Capacitance (ciss) @ Vds: 298pF @ 15V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN360PTR

Typical Characteristics
10
0.01
100
Figure 9. Maximum Safe Operating Area.
0.1
8
6
4
2
0
10
Figure 7. Gate Charge Characteristics.
1
0
0.1
0.001
0.01
0.1
R
SINGLE PULSE
I
0.0001
R
D
1
DS(ON)
= -3.6A
V
JA
T
GS
1
A
=270
= 25
= -10V
LIMIT
D = 0.5
0.2
0.1
o
0.05
o
C/W
C
0.02
-V
DS
0.01
2
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
Q
1
g
, GATE CHARGE (nC)
0.001
3
DC
1s
100ms
Figure 11. Transient Thermal Response Curve.
V
4
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
10ms
DS
= -5V
10
1ms
100 s
5
0.01
-15V
10 s
6
-10V
100
7
0.1
t
1
, TIME (sec)
400
300
200
100
20
15
10
5
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
RSS
1
0.01
6
-V
Power Dissipation.
DS
C
OSS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
12
10
t
1
, TIME (sec)
C
1
ISS
18
P(pk)
Duty Cycle, D = t
10
T
R
R
J
JA
- T
100
JA
(t) = r(t) + R
SINGLE PULSE
R
A
t
= 270 °C/W
1
= P * R
JA
t
T
24
2
FDN360P Rev F1 (W)
A
100
= 270°C/W
= 25°C
f = 1 MHz
V
GS
= 0 V
JA
1
JA
(t)
/ t
1000
2
30
1000