FDN308P Fairchild Semiconductor, FDN308P Datasheet - Page 3

MOSFET P-CH 20V 1.5A SSOT-3

FDN308P

Manufacturer Part Number
FDN308P
Description
MOSFET P-CH 20V 1.5A SSOT-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDN308P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 1.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
5.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
341pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.125 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1.5 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Price
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Typical Characteristics
10
10
8
6
4
2
0
8
6
4
2
0
0.5
0
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
Figure 1. On-Region Characteristics.
1
V
-50
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
GS
-4.0V
V
= -4.5V
V
I
DS
GS
D
= -1.5A
= - 5V
= -4.5V
-25
1
-V
-V
1
GS
withTemperature.
-3.5V
DS
T
, GATE TO SOURCE VOLTAGE (V)
0
J
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
1.5
-3.0V
25
2
2
50
T
A
-2.5V
= -55
75
2.5
o
C
100
3
o
C)
125
-2.0V
3
o
C
125
25
o
C
3.5
150
4
Figure 6. Body Diode Forward Voltage Variation
0.34
0.26
0.22
0.18
0.14
0.06
0.3
0.1
0.0001
0.001
0.01
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
0.1
10
2
1
1
0
0
Drain Current and Gate Voltage.
V
GS
= 0V
V
GS
Gate-to-Source Voltage.
0.2
= -2.5V
-V
T
-V
A
2
SD
2
= 25
GS
, BODY DIODE FORWARD VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
A
o
= 125
C
-3.0V
-I
0.4
D
, DRAIN CURRENT (A)
o
C
4
T
A
= 125
-3.5V
3
0.6
25
o
o
C
C
6
-55
-4.0V
0.8
o
C
4
8
FDN308P Rev B(W)
I
D
1
= -0.8 A
-4.5V
1.2
10
5

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