ZXM41N10FTC Diodes Zetex, ZXM41N10FTC Datasheet
ZXM41N10FTC
Manufacturer Part Number
ZXM41N10FTC
Description
MOSFET N-CHAN 100V SOT23-3
Manufacturer
Diodes Zetex
Datasheet
1.ZXM41N10FTC.pdf
(2 pages)
Specifications of ZXM41N10FTC
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8 Ohm @ 150mA, 4.5V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
170mA
Vgs(th) (max) @ Id
1.5V @ 1mA
Input Capacitance (ciss) @ Vds
25pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET
FEATURES
•
•
DEVICE MARKING
•
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (at T
NOTES:
(1)
(3)
ISSUE 2 - OCTOBER 2006
PARAMETER
Drain-source voltage
Drain-gate voltage
Continuous drain current at T
Pulsed drain current
Gate-source voltage
Power dissipation at T
Operating and storage temperature range
PARAMETER
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-body leakage
Zero gate voltage drain current
Static drain-source on-state
resistance
Forward transconductance
Input capacitance
Common source output
capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Measured under pulsed conditions. Width=300µs. Duty cycle
Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
BV
Low Threshold
410
DSS
= 100V
(2)(3)
(2)(3)
(1)
(2)
(2)
(2)(3)
(2)(3)
amb
=25°C
(1)(2)
amb
(2)
=25°C
SYMBOL MIN.
BV
V
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
DSS
amb
100
0.5
80
2% (2) Sample test.
= 25°C unless otherwise stated)
1
PINOUT TOP VIEW
SYMBOL
V
V
I
I
V
P
T
TYP.
25
9
4
10
10
15
25
D
DM
tot
j
DS
DGR
GS
:T
stg
MAX.
1.5
50
500
8
12
UNIT CONDITIONS
V
V
nA
nA
mS
pF
pF
pF
ns
ns
ns
ns
-55 to +150
VALUE
I
I
V
V
V
V
V
V
D
D
V
± 20
100
100
170
680
360
DS
GS
GS
DS
DS
DD
=0.25mA, V
=1mA, V
GS
=100V, V
=25V, I
=25V, V
=4.5V, I
=3V, I
≈30V, I
=±20V, V
ZXM41N10F
S E M I C O N D U C T O R S
D
DS
=50mA
D
D
GS
=100mA
D
GS
=150mA
= V
=280mA
DS
GS
=0V, f=1MHz
=0V
=0V
=0V
GS
UNIT
mW
mA
mA
°C
V
V
V
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ZXM41N10FTC Summary of contents
Page 1
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • 100V DSS • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Drain-gate voltage Continuous drain current at T amb Pulsed drain current Gate-source voltage Power ...
Page 2
ZXM41N0F PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C 1.10 0.043 D 0.37 0.53 0.015 0.021 ...