ZXMN3B01FTA Diodes Zetex, ZXMN3B01FTA Datasheet - Page 2

• Manufacturer Part Number: ZXMN3B01FTA
• Description: MOSFET N-CHAN 30V 2A SOT23-3
• Manufacturer: Diodes Zetex

Specifications of ZXMN3B01FTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 2.93nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 258pF @ 15V
• Power - Max: 625mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN3B01FTA

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
ZXMN3B01F
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient
Junction to Ambient
S E M I C O N D U C T O R S
(c)
(a)
(b)
A
A
=25°C
=25°C
@ V
@ V
GS
GS
GS
(a)
(b)
=4.5V; T
=4.5V; T
=4.5V; T
(c)
A
A
A
=25°C
=70°C
=25°C
(b)
5 sec.
(b)
(b)
(a)
SYMBOL
R
R
2
JA
JA
SYMBOL
V
V
I
I
I
I
P
P
T
D
DM
S
SM
D
D
j
DSS
GS
, T
stg
VALUE
-55 to +150
200
155
LIMIT
625
806
2.0
1.6
1.7
9.4
1.3
9.4
6.4
30
5
ISSUE 1 - DECEMBER 2005
12
UNIT
°C/W
°C/W
mW/°C
mW/°C
UNIT
mW
mW
°C
A
A
A
A
A
A
V
V