ZXMP3A13FTA Diodes Zetex, ZXMP3A13FTA Datasheet - Page 2

• Manufacturer Part Number: ZXMP3A13FTA
• Description: MOSFET P-CH 30V 1.4A SOT23-3
• Manufacturer: Diodes Zetex

Specifications of ZXMP3A13FTA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 210 mOhm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 6.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 206pF @ 15V
• Power - Max: 625mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP3A13FTR

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ZXMP3A13F
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to ambient (a)
Junction to ambient (b)
A
A
=25°C (a)
=25°C (b)
V
V
GS
GS
GS
=10V; T
=10V; T
=10V; T
A
A
A
=70°C (b)
=25°C (a)
=25°C (b)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
2
D
D
j
DSS
GS
θJA
θJA
:T
stg
-55 to +150
VALUE
LIMIT
200
155
-1.6
-1.3
-1.4
-1.2
625
806
-30
6.4
-6
-6
5
20
ISSUE 1 - MAY 2007
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
mW
mW
°C
V
V
A
A
A
A