FDG328P Fairchild Semiconductor, FDG328P Datasheet
FDG328P
Manufacturer Part Number
FDG328P
Description
MOSFET P-CH 20V 1.5A SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDG328P.pdf
(5 pages)
Specifications of FDG328P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
145 mOhm @ 1.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
337pF @ 10V
Power - Max
480mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.145 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1.5 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDG328P
Manufacturer:
Fairchild Semiconductor
Quantity:
29 231
Part Number:
FDG328P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDG328P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor’s
advanced PowerTrench process. It has been optimized
for power management applications for a wide range of
gate drive voltages (2.5V – 12V).
Applications
2000 Fairchild Semiconductor International
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JA
Load switch
Power management
DC/DC converter
Device Marking
STG
SC70-6
.28
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Pin 1
D
D
S
– Continuous
– Pulsed
FDG328P
Device
Parameter
D
D
G
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(
(Note 1a)
(Note 1a)
(Note 1b)
Note 1b)
Features
–1.5 A, –20 V. R
Low gate charge
High performance trench technology for extremely
low R
Compact industry standard SC70-6 surface mount
package
DS(ON)
1
2
3
Tape width
-55 to +150
8mm
R
Ratings
DS(ON)
DS(ON)
–1.5
0.75
0.48
–20
260
–6
12
= 0.145
= 0.210
October 2000
6
5
4
@ V
@ V
GS
GS
3000 units
FDG328P Rev C(W)
Quantity
= –4.5 V
= –2.5 V
Units
C/W
W
V
V
A
C
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FDG328P Summary of contents
Page 1
... T =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) ( Note 1b) Reel Size 7’’ October 2000 = 0.145 @ V = –4.5 V DS(ON 0.210 @ V = –2.5 V DS(ON Ratings Units – –1.5 A –6 0.75 W 0.48 -55 to +150 C 260 C/W Tape width Quantity 8mm 3000 units FDG328P Rev C(W) ...
Page 2
... –1 –4 –0. determined by the user's board design. CA Min Typ Max Units –20 –9 mV/ C –1 100 –100 –0.6 –1.5 3 mV/ C 120 145 169 210 =125°C 156 203 J –3 5 337 3.7 6 0.7 1.3 –0.62 –0.7 –1.2 (Note 2) FDG328P Rev C( ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.0V GS -2.5V -3.0V -3.5V -4. DRAIN CURRENT (A) D Current 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDG328P Rev C( 1.4 ...
Page 4
... DRAIN TO SOURCE VOLTAGE (V) DS Figure 8. Capacitance Characteristics 100 0.0001 0.001 0.01 SINGLE PULSE TIME (SEC) Figure 10. Single Pulse Maximum Power Dissipation. 0 TIME (sec 1MHz ISS C OSS C RSS SINGLE PULSE 260 C 0 100 R ( 260 °C/W JA P(pk ( Duty Cycle 100 1000 FDG328P Rev C(W) ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...