ZXMN6A08E6TC Diodes Zetex, ZXMN6A08E6TC Datasheet - Page 6

• Manufacturer Part Number: ZXMN6A08E6TC
• Description: MOSFET N-CHAN 60V SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXMN6A08E6TC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 459pF @ 40V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics – continued
Test Circuits
ZXMN6A08E6
Document Number DS33376 Rev. 5 - 2
90%
10%
V
V
DS
GS
V
600
400
200
G
Capacitance v Drain-Source Voltage
0
Q
GS
t
Basic gate charge waveform
d(on)
Switching time waveforms
V
DS
t
1
(on)
- Drain - Source Voltage (V)
t
r
Q
Q
G
GD
C
ISS
Charge
C
t
d(off)
OSS
10
t
(on)
C
t
V
f = 1MHz
r
RSS
GS
= 0V
www.diodes.com
6 of 8
10
8
6
4
2
0
0
Gate-Source Voltage v Gate Charge
Switching time test circuit
Gate charge test circuit
12V
1
R
G
Diodes Incorporated
Q - Charge (nC)
A Product Line of
2
V
regulator
Current
GS
50k
I
G
V
GS
3
R
Same as
D.U.T
D
D.U.T
4
ZXMN6A08E6
V
DS
V
I
D
DS
= 1.4A
5
= 15V
I
V
D
© Diodes Incorporated
DS
V
DD
August 2010
6