FQP4N25 Fairchild Semiconductor, FQP4N25 Datasheet - Page 84
FQP4N25
Manufacturer Part Number
FQP4N25
Description
MOSFET N-CH 250V 3.6A TO-220
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQP4N25.pdf
(214 pages)
Specifications of FQP4N25
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.6A
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
52W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQP4N25
Manufacturer:
FAIRCHILD
Quantity:
12 500
Company:
Part Number:
FQP4N25
Manufacturer:
FSC
Quantity:
86 755
- Current page: 84 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Bipolar Power Transistors – Darlington Transistors (Continued)
Products
TIP127
KSB601
BDW24
BDW24A
BDW24B
BDW24C
BDX54
BDX54A
TIP105
BDX54B
TIP106
BDX54C
TIP107
BDX34A
BDX34B
TIP146T
BDX34C
TIP147T
BDW94
BDW94C
TO-220F NPN Configuration
KSD1413
KSD1589
KSD1417
BDW93CF
TO-220F PNP Configuration
FJPF9020
KSB1023
KSB1098
KSB1022
TO-251(IPAK) NPN Configuration
KSD1222
TO-251(IPAK) PNP Configuration
KSB907
I
C
10
10
10
10
10
12
12
12
5
5
6
6
6
6
8
8
8
8
8
8
8
3
5
7
2
3
5
7
3
3
(A)
V
CEO
100
100
100
100
100
100
100
100
100
100
550
100
45
60
80
45
60
60
80
80
60
80
80
45
60
60
60
60
40
40
(V) V
CBO
100
100
100
100
100
100
100
100
150
100
550
100
45
60
80
45
60
60
80
80
60
80
80
45
60
60
60
60
60
60
(V) V
EBO
–
–
–
–
–
–
5
7
5
5
5
5
5
5
5
5
5
5
5
5
5
5
7
5
6
5
7
5
5
5
(V)
P
C
65
30
50
50
50
50
60
60
80
60
80
60
80
70
70
80
70
80
80
80
20
20
30
30
15
20
20
30
15
15
(W)
1000
2000
1000
1000
1000
1000
1000
2000
2000
2000
2000
2000
2000
2000
2000
Min
750
750
750
750
750
750
750
750
750
750
750
750
750
750
400
2-79
Discrete Power Products –
15000
20000
20000
20000
20000
20000
20000
20000
20000
20000
15000
15000
20000
15000
15000
Max
700
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@I
0.5
C
3
2
2
2
2
3
3
3
3
3
3
3
4
3
5
3
5
5
5
1
3
3
5
1
1
3
3
1
1
(A) @V
CE
3
2
3
3
3
3
3
3
4
3
4
3
4
3
3
4
3
4
3
3
2
2
3
–
4
2
2
3
2
2
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.95
0.9
0.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.5
2.5
2.5
2.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
V
CE
(sat)
C
3
3
2
2
2
2
3
3
3
3
3
3
3
4
3
5
3
5
5
5
2
3
3
5
1
2
3
3
2
2
(A) @I
0.012
0.003
0.008
0.008
0.008
0.008
0.012
0.012
0.006
0.012
0.006
0.012
0.006
0.008
0.006
0.006
0.004
0.003
0.006
0.004
0.003
0.006
0.004
0.004
0.01
0.01
0.02
0.02
0.02
0.02
B
(A)
Related parts for FQP4N25
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: