FDT434P Fairchild Semiconductor, FDT434P Datasheet - Page 2
![MOSFET P-CH 20V 6A SOT-223](/photos/5/57/55707/fdt434p_sml.jpg)
FDT434P
Manufacturer Part Number
FDT434P
Description
MOSFET P-CH 20V 6A SOT-223
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Specifications of FDT434P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 4.5V
Input Capacitance (ciss) @ Vds
1187pF @ 10V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.05 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
6.5 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
6 A
Power Dissipation
3000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.05Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Drain Current (max)
6A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Continuous Drain Current Id
6A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
40mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-600mV
Transistor Case Style
SOT-223
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDT434P
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDT434P
Manufacturer:
FSC
Quantity:
35 000
Part Number:
FDT434P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
I
On Characteristics
V
∆V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
FS
GS(th)
SD
θJA
DS(on)
iss
oss
rss
∆T
∆T
g
gs
gd
GS(th)
DSS
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage Current,
Forward
Gate–Body Leakage Current,
Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
θJC
is guaranteed by design while R
a) 42°C/W when
mounted on a 1in
pad of 2 oz copper
Parameter
(Note 2)
2
(Note 2)
θCA
is determined by the user's board design.
T
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
A
D
D
b) 95°/W when mounted
= 25°C unless otherwise noted
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –250 µA,Referenced to 25°C
= –250 µA,Referenced to 25°C
on a .0066 in
2 oz copper
= –16 V,
= V
= –10 V,
= –10 V,
= –10 V,
= 0 V, I
= 8 V,
= –8 V
= –4.5 V,
= –2.5 V,
= –4.5 V, I
= –4.5 V,
= –5 V,
= –4.5 V,
= –4.5 V
= 0 V,
Test Conditions
GS
, I
D
D
I
2
= –250 µA
= –250 µA
S
pad of
D
= –2.5 A
V
V
V
= –6 A T
I
I
V
I
GS
DS
D
D
V
I
I
R
D
DS
D
D
GS
DS
= –6 A
= –4 A
GEN
= –6 A,
= 0 V
= –6 A
= –1 A,
= 0 V
= 0 V
= –5 V
= 0 V,
= 6 Ω
J
=125°C
(Note 2)
Min
–0.4
–20
–20
c) 110°/W when mounted on a
minimum pad.
0.040
0.050
0.067
–0.75
Typ Max Units
1187
–0.6
–28
270
114
6.5
1.8
15
45
30
13
2
8
3
0.050
0.070
0.083
–100
–2.5
–1.2
100
–1
–1
16
25
65
50
19
FDT434P Rev. C1 (W)
mV/°C
mV/°C
nC
nC
nC
µA
nA
nA
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
A
S
A
V