FDT434P Fairchild Semiconductor, FDT434P Datasheet - Page 2

• Manufacturer Part Number: FDT434P
• Description: MOSFET P-CH 20V 6A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDT434P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1187pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.05 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6.5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 6 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.05Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Drain Current (max): 6A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 40mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -600mV
• Transistor Case Style: SOT-223
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDT434P

FDT434P Rev. C2
©2011 Fairchild Semiconductor Corporation
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
I
On Characteristics
V
∆V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
FS
GS(th)
SD
θJA
DS(on)
iss
oss
rss
∆T
∆T
g
gs
gd
GS(th)
DSS
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage Current,
Forward
Gate–Body Leakage Current,
Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
θJC
is guaranteed by design while R
a) 42°C/W when
mounted on a 1in
pad of 2 oz copper
Parameter
(Note 2)
2
(Note 2)
θCA
is determined by the user's board design.
T
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
A
D
D
b) 95°/W when mounted
= 25°C unless otherwise noted
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –250 µA,Referenced to 25°C
= –250 µA,Referenced to 25°C
on a .0066 in
2 oz copper
= –16 V,
= V
= –10 V,
= –10 V,
= –10 V,
= 0 V, I
= 8 V,
= –8 V
= –4.5 V,
= –2.5 V,
= –4.5 V, I
= –4.5 V,
= –5 V,
= –4.5 V,
= –4.5 V
= 0 V,
Test Conditions
GS
2
, I
D
D
I
2
= –250 µA
= –250 µA
S
pad of
D
= –2.5 A
V
V
V
= –6 A T
I
I
V
I
GS
DS
D
D
V
I
I
R
D
DS
D
D
GS
DS
= –6 A
= –4 A
GEN
= –6 A,
= 0 V
= –6 A
= –1 A,
= 0 V
= 0 V
= –5 V
= 0 V,
= 6 Ω
J
=125°C
(Note 2)
Min
–0.4
–20
–20
c) 110°/W when mounted on a
minimum pad.
0.040
0.050
0.067
–0.75
Typ Max Units
1187
–0.6
–28
270
114
6.5
1.8
15
45
30
13
2
8
3
0.050
0.070
0.083
www.fairchildsemi.com
–100
–2.5
–1.2
100
–1
–1
16
25
65
50
19
mV/°C
mV/°C
nC
nC
nC
µA
nA
nA
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
A
S
A
V